公开(公告)号：US20240008292A1

公开(公告)日：2024-01-04

申请号：US18299811

申请日：2023-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keon Jae Lee ,  Sang Hyun Sung ,  Young Hoon Jung

IPC: H10B63/00 ,  H10B63/10 ,  H10N70/20 ,  H10N70/00 ,  G06N3/063

CPC classification number: H10B63/82 ,  H10B63/10 ,  H10N70/231 ,  H10N70/24 ,  H10N70/841 ,  H10N70/8828 ,  H10N70/883 ,  H10N70/026 ,  G06N3/063

Abstract: Disclosed is a neuromorphic memory element, which includes a first electrode; a second electrode; a first thin film layer adjacent to the first electrode between the first electrode and the second electrode and that is configured to emulate a neuronal plasticity by performing a volatile storage function based on a voltage difference between the first electrode and the second electrode; and a second thin film layer between the first thin film layer and the second electrode and that is configured to emulate a synaptic plasticity by performing a non-volatile storage function.