公开(公告)号：US12204241B2

公开(公告)日：2025-01-21

申请号：US17462401

申请日：2021-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin Jung ,  Sangwook Park

IPC: G03F1/36 ,  G06F30/398

Abstract: An optical proximity correction method of a lithography system includes dividing a transmission cross coefficient (TCC) for each slit region; generating an optical proximity correction (OPC) model to which the divided TCC is applied; measuring an apodization value for each slit position; fitting critical dimension (CD) data for each slit position to a simulation CD of the OPC model; and correcting the OPC model using the fitted CD data.

公开(公告)号：US11415876B2

公开(公告)日：2022-08-16

申请号：US17030941

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin Jung ,  Sangwook Park ,  Youngdeok Kwon ,  Myungsoo Noh

IPC: G03F1/36 ,  G03F1/22

Abstract: The present disclosure relates to a fabrication method of a photomask. The method of fabricating a photomask provides for a layout of patterns to be designed. The layout of patterns may be formed on a wafer on which chips are formed. The layout of patterns are corrected to provide a layout of a photoresist pattern serving as an etching mask for forming the patterns on the wafer while generating a flare map of the patterns. An optical proximity correction (OPC) may be performed at a chip level on the corrected layout of patterns to perform a secondary correction of the layout of patterns. A second OPC may be performed at a level of a shot which includes a plurality of ones of the chips by reflecting the flare map on the second corrected layout of patterns to a third corrected layout of patterns.