公开(公告)号：US20210181617A1

公开(公告)日：2021-06-17

申请号：US17030941

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KANGMIN JUNG ,  Sangwook Park ,  Youngdeok Kwon ,  Myungsoo Noh

IPC: G03F1/36 ,  G03F1/22

Abstract: The present disclosure relates to a fabrication method of a photomask. The method of fabricating a photomask provides for a layout of patterns to be designed. The layout of patterns may be formed on a wafer on which chips are formed. The layout of patterns are corrected to provide a layout of a photoresist pattern serving as an etching mask for forming the patterns on the wafer while generating a flare map of the patterns. An optical proximity correction (OPC) may be performed at a chip level on the corrected layout of patterns to perform a secondary correction of the layout of patterns. A second OPC may be performed at a level of a shot which includes a plurality of ones of the chips by reflecting the flare map on the second corrected layout of patterns to a third corrected layout of patterns.

公开(公告)号：US10963614B2

公开(公告)日：2021-03-30

申请号：US16845506

申请日：2020-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonglim Kim ,  Youngdeok Kwon ,  Myungsoo Noh

IPC: G06F30/392 ,  G03F7/20

Abstract: In a method of manufacturing a photomask, a layout of a circuit mask pattern in a mask region corresponding to a chip region of a substrate is designed. A layout of a monitoring mask pattern representing a critical dimension (CD) of the circuit mask pattern in the mask region is designed. The monitoring mask pattern includes a mask-critical dimension uniformity (CDU) detection pattern configured to detect CDU in mask and a wafer-CDU detection pattern configured to detect CDU in wafer. A first optical proximity correction (OPC) is performed on the mask-CDU detection pattern. A second optical proximity correction is performed on the wafer-CDU detection pattern. A photomask having the circuit mask pattern and the monitoring mask pattern is formed.

公开(公告)号：US11415876B2

公开(公告)日：2022-08-16

申请号：US17030941

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin Jung ,  Sangwook Park ,  Youngdeok Kwon ,  Myungsoo Noh

IPC: G03F1/36 ,  G03F1/22

Abstract: The present disclosure relates to a fabrication method of a photomask. The method of fabricating a photomask provides for a layout of patterns to be designed. The layout of patterns may be formed on a wafer on which chips are formed. The layout of patterns are corrected to provide a layout of a photoresist pattern serving as an etching mask for forming the patterns on the wafer while generating a flare map of the patterns. An optical proximity correction (OPC) may be performed at a chip level on the corrected layout of patterns to perform a secondary correction of the layout of patterns. A second OPC may be performed at a level of a shot which includes a plurality of ones of the chips by reflecting the flare map on the second corrected layout of patterns to a third corrected layout of patterns.