公开(公告)号：US20200343364A1

公开(公告)日：2020-10-29

申请号：US16572681

申请日：2019-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyun KIM ,  Inhyun SONG ,  Yeongmin JEON ,  Sejin PARK ,  Juyun PARK ,  Jonghoon BAEK ,  Taeyeon SHIN ,  Sooyeon JEONG

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.

公开(公告)号：US20240030305A1

公开(公告)日：2024-01-25

申请号：US18199133

申请日：2023-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehyun LEE ,  Jonghan LEE ,  Jonghoon BAEK ,  Taegon KIM ,  Yujin JUNG

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/78696

Abstract: The present disclosure provides for semiconductor devices including field effect transistors. In some embodiments, the semiconductor device includes active structures extending in a first direction on a substrate, an isolation pattern formed in a trench between the active structures, gate structures extending in a second direction across the active structures, a cutting insulation pattern formed between end portions of the gate structures in the second direction, and a lower impurity region at an upper portion of the isolation pattern. A first shape of a lower portion of the cutting insulation pattern disposed under an uppermost surface of the isolation pattern is different from a second shape of a lower portion of the gate structures disposed under the uppermost surface of the isolation pattern. The gate structures are formed on the active structures and the isolation pattern. The lower impurity region contacts at least a portion of the cutting insulation pattern.