公开(公告)号：US20230042905A1

公开(公告)日：2023-02-09

申请号：US17704465

申请日：2022-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongchul JEONG ,  Sangjin KIM ,  Yigwon KIM ,  Kyeongbeom PARK ,  Suhyun BARK ,  Sangshin JANG ,  Jinhee JANG ,  Cheolin JANG ,  Tae Min CHOI

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/311

Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming an etch-target layer, a mask layer, a blocking layer, and a photoresist layer, which are sequentially stacked on a substrate; forming a photoresist pattern, the forming the photoresist pattern including irradiating the photoresist layer with extreme ultraviolet (EUV) light; forming a mask layer, the forming the mask layer including etching the mask layer using the photoresist pattern as an etch mask; and forming a target pattern, the forming the target pattern including etching the etch-target layer using the mask pattern as an etch mask. The photoresist layer may include an organic metal oxide. The blocking layer may be a non-polar layer and may limit and/or prevent a metallic element in the photoresist layer from infiltrating into the mask layer.

公开(公告)号：US20230036420A1

公开(公告)日：2023-02-02

申请号：US17697019

申请日：2022-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongchul JEONG ,  Sangjin KIM ,  Yigwon KIM ,  Jinhee JANG ,  Taemin CHOI

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  G03F7/20

Abstract: A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material, The etching object layer is etched using the photoresist pattern as an etching mask.

公开(公告)号：US20230400758A1

公开(公告)日：2023-12-14

申请号：US18317328

申请日：2023-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yigwon KIM ,  Sangjin KIM ,  Jihun LEE ,  Jinhee JANG ,  Jeonghyun KIM

IPC: G03F1/22

CPC classification number: G03F1/22

Abstract: An extreme ultraviolet (EUV) photomask may include a mask structure including a main region, a scribe lane region surrounding the main region, buffer regions outside the scribe lane region and apart from each other and each having a same first width, and a black border region outside the buffer regions. The buffer regions may include a first buffer region, a second buffer region, and a third buffer region. The black border region may include a first corner region, a second corner region, and a third corner region. The first corner region may contact the first buffer region and the second buffer region. The second corner region may contact the first buffer region, the third buffer region, and a side of the scribe lane region. The third corner region may contact the second buffer region and the third buffer region.