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    Stacked display device and control method thereof
    2.
    发明授权
    Stacked display device and control method thereof 有权

    公开(公告)号：US11756493B2

    公开(公告)日：2023-09-12

    申请号：US17583753

    申请日：2022-01-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jihye Lee ,  Bora Jin ,  Youngjin Yoon ,  Yeoul Lee ,  Jaesung Lee ,  Sunil Lee

    IPC: G09G3/34 ,  G09G3/20

    CPC classification number: G09G3/3433 ,  G09G3/2003 ,  G09G2300/023 ,  G09G2320/0686

    Abstract: A stacked display device and a control method thereof are provided. The stacked display device includes a stacked display including a first panel and a second panel comprising a different transmittance from the first panel and a processor to obtain a first layer image to display an image on the first panel and a second layer image to display an image on the second panel, adjust brightness of the second layer image based on a ratio between a first transmittance for the first panel and a second transmittance for the second panel, and a pixel value of the second layer image, and control the stacked display to display the second layer image of which brightness is adjusted on the second panel while displaying the first layer image on the first panel.

    Case for electronic device
    6.
    外观设计
    Case for electronic device 有权

    公开(公告)号：USD986868S1

    公开(公告)日：2023-05-23

    申请号：US29785285

    申请日：2021-05-25

    Applicant: Samsung Electronics Co., Ltd.

    Designer： Jaehyung Kim ,  Kwanhee Lee ,  Jihye Lee

    Abstract: FIG. 1 is a front perspective view of a case for electronic device showing our new design;
    FIG. 2 is a front view thereof;
    FIG. 3 is a rear view thereof;
    FIG. 4 is a left-side view thereof;
    FIG. 5 is a right-side view thereof;
    FIG. 6 is a top view thereof; and,
    FIG. 7 is a bottom view thereof.
    The broken lines in the figures depict portions of the case for electronic device which form no part of the claimed design.

    Electronic apparatus and control method thereof
    7.
    发明授权
    Electronic apparatus and control method thereof 有权

    公开(公告)号：US11575882B2

    公开(公告)日：2023-02-07

    申请号：US17135247

    申请日：2020-12-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Bora Jin ,  Yeoul Lee ,  Jihye Lee ,  Kyungmin Lim ,  Jaesung Lee

    IPC: H04N13/395 ,  H04N13/122 ,  G06N3/08 ,  G09G3/00 ,  H04N13/351 ,  H04N13/128

    Abstract: An electronic apparatus includes a stacked display including a plurality of panels, and a processor configured to obtain first light field (LF) images of different viewpoints, input the obtained first LF images to an artificial intelligence model for converting an LF image into a layer stack, to obtain a plurality of layer stacks to which a plurality of shifting parameters indicating depth information in the first LF images are respectively applied, and control the stacked display to sequentially and repeatedly display, on the stacked display, the obtained plurality of layer stacks. The artificial intelligence model is trained by applying the plurality of shifting parameters that are obtained based on the depth information in the first LF images.

    Semiconductor device
    10.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11961839B2

    公开(公告)日：2024-04-16

    申请号：US18133156

    申请日：2023-04-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyojin Kim ,  Jihye Lee ,  Sangmoon Lee ,  Seung Hun Lee

    IPC: H01L29/161 ,  H01L27/092

    CPC classification number: H01L27/092 ,  H01L29/161

    Abstract: A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

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