公开(公告)号：US20130236634A1

公开(公告)日：2013-09-12

申请号：US13789901

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Min CHOI ,  Dong Ju LEE ,  Heon Ho LEE ,  Jang Mi KIM ,  Ok Hyun KIM

IPC: C23C16/52

CPC classification number: C23C16/52

Abstract: There is provided a chemical vapor deposition apparatus, including: a reaction chamber including a support part having a wafer placed thereon and a gas supply part supplying a process gas to a reactive space formed above the support part to allow a thin film to be grown on a surface of the wafer; a heat exchanger changing a temperature of the process gas, supplied to the reactive space through the gas supply part, to allow the process gas to be maintained at a set temperature: and a controller regulating a flow rate of the process gas, and detecting a temperature difference between a temperature of the process gas and the set temperature to thereby control the heat exchanger to supply the process gas to the reactive space while the process gas is maintained at a reference temperature set according to each stage.

Abstract translation: 提供了一种化学气相沉积设备，包括：反应室，其包括具有放置在其上的晶片的支撑部分，以及将处理气体供应到形成在支撑部分上方的反应空间的气体供应部分，以使薄膜生长在 晶片的表面; 换热器，其通过气体供给部供给至反应空间的工艺气体的温度，使处理气体保持在设定温度;以及控制器，调节处理气体的流量， 处理气体的温度与设定温度之间的温度差，从而控制热交换器以将处理气体供应到反应空间，同时处理气体保持在根据每个阶段设定的参考温度。

公开(公告)号：US20170077346A1

公开(公告)日：2017-03-16

申请号：US15341259

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Heon HAN ,  Dong Yul LEE ,  Seung Hyun KIM ,  Jang Mi KIM ,  Suk Ho YOON ,  Sang Jun LEE

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/06

CPC classification number: H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of fabricating a semiconductor light emitting device includes forming a first conductivity type semiconductor layer, forming an active layer by alternately forming a plurality of quantum well layers and a plurality of quantum barrier layers on the first conductivity type semiconductor layer, and forming a second conductivity type semiconductor layer on the active layer. The plurality of quantum barrier layers include at least one first quantum barrier layer adjacent to the first conductivity type semiconductor layer and at least one second quantum barrier layer adjacent to the second conductivity type semiconductor layer. The forming of the active layer includes allowing the at least one first quantum barrier layer to be grown at a first temperature and allowing the at least one second quantum barrier layer to be grown at a second temperature lower than the first temperature.

Abstract translation: 一种制造半导体发光器件的方法包括：形成第一导电型半导体层，通过在第一导电型半导体层上交替地形成多个量子阱层和多个量子势垒层来形成有源层，并形成第二导电型半导体层 导电型半导体层。 多个量子势垒层包括与第一导电类型半导体层相邻的至少一个第一量子势垒层和与第二导电类型半导体层相邻的至少一个第二量子势垒层。 活性层的形成包括允许至少一个第一量子势垒层在第一温度下生长并允许至少一个第二量子势垒层在低于第一温度的第二温度下生长。

公开(公告)号：US20180198019A1

公开(公告)日：2018-07-12

申请号：US15678462

申请日：2017-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won JEAN ,  Min Ho KIM ,  Min Hwan KIM ,  Jang Mi KIM ,  Chul Min KIM ,  Jeong Wook LEE ,  Jae Deok JEONG ,  Yong Seok CHOI

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/12 ,  H01L33/325

Abstract: A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.