公开(公告)号：US20190130953A1

公开(公告)日：2019-05-02

申请号：US15997964

申请日：2018-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Yun LEE ,  Joon Soo KWON ,  Byung Soo KIM ,  Su-Yong KIM ,  Sang-Soo PARK ,  Il Han PARK ,  Kang-Bin LEE ,  Jong-Hoon LEE ,  Na-Young CHOI

IPC: G11C8/08 ,  G06F3/06 ,  G11C16/12 ,  G11C5/14 ,  G11C16/14 ,  G11C29/02

Abstract: A memory device comprises a memory cell array including a first memory cell disposed on a substrate and a second memory cell above the first memory cell; a first word line connected to the first memory cell and a second word line connected to the second memory cell, the second word line disposed above the first word line; and a word line defect detection circuit configured to monitor a number of pulses of a pumping clock signal while applying a first voltage to the first word line to detect a defect of the first word line. The voltage generator is configured to apply a second voltage different from the first voltage to the second word line for programming the second memory cell when the number of pulses of the pumping clock signal is smaller than a reference value.

公开(公告)号：US20250157505A1

公开(公告)日：2025-05-15

申请号：US18825025

申请日：2024-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yo Han LEE ,  Sang Soo PARK ,  Jung-Yun YUN ,  Jae-Yun LEE

IPC: G11C7/10 ,  G11C29/52

Abstract: A nonvolatile memory device includes a memory cell array configured to store first and second setting data, a page buffer circuit configured to store data of the memory cell array, and a control logic circuit. The control logic circuit is configured to control a sensing operation based on setting data stored in a setting buffer, perform first sensing of the first setting data stored in the memory cell array in a first sensing scheme, and store the sensed first setting data in the page buffer circuit, dump down the first setting data stored in the page buffer circuit into the setting buffer, and perform second sensing of the second setting data stored in the memory cell array in a second sensing scheme based on the first setting data dumped down into the setting buffer, and store the sensed second setting data in the page buffer circuit.