公开(公告)号：US10529816B2

公开(公告)日：2020-01-07

申请号：US15915508

申请日：2018-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-hyeong Lee ,  Hoon-joo Na ,  Sung-in Suh ,  Min-woo Song ,  Byoung-hoon Lee ,  Hu-yong Lee ,  Sang-jin Hyun

IPC: H01L29/772 ,  H01L29/49 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/28 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device includes an active region in a substrate, at least one nano-sheet on the substrate and spaced apart from a top surface of the active region, a gate above or below the nano-sheet, a gate insulating layer between the at least one nano-sheet and the gate, and source/drain regions on the active region at both sides of the at least one nano-sheet. The at least one nano-sheet includes a channel region; a gate disposed above or below the nano-sheet and including a single metal layer having different compositions of metal atoms of a surface and an inside thereof; a gate insulating layer between the nano-sheet and the gate; and source/drain regions disposed in the active region of both sides of the at least one nano-sheet.

公开(公告)号：US11588039B2

公开(公告)日：2023-02-21

申请号：US16694242

申请日：2019-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-hyeong Lee ,  Hoon-joo Na ,  Sung-in Suh ,  Min-woo Song ,  Byoung-hoon Lee ,  Hu-yong Lee ,  Sang-jin Hyun

IPC: H01L29/06 ,  H01L29/49 ,  H01L29/423 ,  H01L29/786 ,  H01L21/28 ,  H01L29/66 ,  H01L29/775 ,  H01L27/088 ,  B82Y10/00 ,  H01L27/06 ,  H01L21/8234 ,  H01L29/417 ,  H01L21/822 ,  H01L21/84

Abstract: A semiconductor device includes an active region in a substrate, at least one nano-sheet on the substrate and spaced apart from a top surface of the active region, a gate above or below the nano-sheet, a gate insulating layer between the at least one nano-sheet and the gate, and source/drain regions on the active region at both sides of the at least one nano-sheet. The at least one nano-sheet includes a channel region; a gate disposed above or below the nano-sheet and including a single metal layer having different compositions of metal atoms of a surface and an inside thereof; a gate insulating layer between the nano-sheet and the gate; and source/drain regions disposed in the active region of both sides of the at least one nano-sheet.

公开(公告)号：US20200098882A1

公开(公告)日：2020-03-26

申请号：US16694242

申请日：2019-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-hyeong LEE ,  Hoon-joo Na ,  Sung-in Suh ,  Min-woo Song ,  Byoung-hoon Lee ,  Hu-yong Lee ,  Sang-jin Hyun

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L27/088 ,  B82Y10/00 ,  H01L27/06 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/423 ,  H01L21/822 ,  H01L29/06 ,  H01L29/786 ,  H01L21/28

Abstract: A semiconductor device includes an active region in a substrate, at least one nano-sheet on the substrate and spaced apart from a top surface of the active region, a gate above or below the nano-sheet, a gate insulating layer between the at least one nano-sheet and the gate, and source/drain regions on the active region at both sides of the at least one nano-sheet. The at least one nano-sheet includes a channel region; a gate disposed above or below the nano-sheet and including a single metal layer having different compositions of metal atoms of a surface and an inside thereof; a gate insulating layer between the nano-sheet and the gate; and source/drain regions disposed in the active region of both sides of the at least one nano-sheet.