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    SEMICONDUCTOR DEVICE
    1.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240113122A1

    公开(公告)日：2024-04-04

    申请号：US18539062

    申请日：2023-12-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gihee Cho ,  Sanghyuck Ahn ,  Hyun-Suk Lee ,  Jungoo Kang ,  Jin-Su Lee ,  Hongsik Chae

    IPC: H01L27/10 ,  G11C8/14

    CPC classification number: H01L27/101 ,  G11C8/14 ,  H01L28/60

    Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

    Semiconductor device and method of manufacturing the same
    2.
    发明授权
    Semiconductor device and method of manufacturing the same 有权

    公开(公告)号：US11411075B2

    公开(公告)日：2022-08-09

    申请号：US17189700

    申请日：2021-03-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gihee Cho ,  Sangyeol Kang ,  Jungoo Kang ,  Taekyun Kim ,  Jiwoon Park ,  Sanghyuck Ahn ,  Jin-Su Lee ,  Hyun-Suk Lee ,  Hongsik Chae

    IPC: H01L49/02 ,  H01L27/108

    Abstract: A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11881482B2

    公开(公告)日：2024-01-23

    申请号：US17852040

    申请日：2022-06-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gihee Cho ,  Sanghyuck Ahn ,  Hyun-Suk Lee ,  Jungoo Kang ,  Jin-Su Lee ,  Hongsik Chae

    IPC: H01L27/10 ,  H10B12/00 ,  G11C8/14 ,  H01L49/02

    CPC classification number: H01L27/101 ,  G11C8/14 ,  H01L28/60

    Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

    SEMICONDUCTOR DEVICE
    4.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230253445A1

    公开(公告)日：2023-08-10

    申请号：US17993943

    申请日：2022-11-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hongsik Chae ,  Taekyun Kim ,  Jinsu Lee ,  Yirang Lim ,  Hanjin Lim ,  Hyungsuk Jung

    IPC: H10B12/00

    CPC classification number: H01L28/75 ,  H01L28/91 ,  H10B12/315 ,  H01L28/92 ,  H10B12/0335

    Abstract: A semiconductor device includes: a substrate; a contact plug on the substrate; a lower electrode electrically connected to the contact plug, and including a first electrode layer, a first buffer layer, and a second electrode layer, sequentially stacked; a first support layer in contact with an upper surface of the lower electrode and disposed to overlap at least a portion of the lower electrode, the first support layer extending in a direction parallel to an upper surface of the substrate; a dielectric layer disposed on the lower electrode and the first support layer; and an upper electrode disposed on the dielectric layer. The lower electrode comprises a first region overlapping the first support layer, and having a first height; and a second region not overlapping the first support layer, and having a second height lower than the first height.

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12205952B2

    公开(公告)日：2025-01-21

    申请号：US18539062

    申请日：2023-12-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gihee Cho ,  Sanghyuck Ahn ,  Hyun-Suk Lee ,  Jungoo Kang ,  Jin-Su Lee ,  Hongsik Chae

    IPC: H01L27/10 ,  G11C8/14 ,  H01L49/02 ,  H10B12/00

    Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

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