公开(公告)号：US11466043B2

公开(公告)日：2022-10-11

申请号：US16881283

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Seungmin Ryu ,  Gyuhee Park ,  Jaesoon Lim ,  Younjoung Cho ,  Akio Saito ,  Wakana Fuse ,  Yutaro Aoki ,  Takanori Koide

IPC: C07F17/00 ,  C09D1/00 ,  C01B21/06 ,  H01L21/28 ,  H01L49/02 ,  H01L21/285

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

公开(公告)号：US11746121B2

公开(公告)日：2023-09-05

申请号：US17072096

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuhee Park ,  Younjoung Cho ,  Haruyoshi Sato ,  Kazuki Harano ,  Hiroyuki Uchiuzou

IPC: C23C16/40 ,  C07F11/00 ,  C01G39/02 ,  C23C16/34 ,  C01B21/06

CPC classification number: C07F11/00 ,  C01B21/062 ,  C01G39/02 ,  C23C16/34 ,  C23C16/405

Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

公开(公告)号：US20250163081A1

公开(公告)日：2025-05-22

申请号：US19029416

申请日：2025-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunwoo Kim ,  Sunggi Kim ,  Yeonghun Kim ,  Samdong Lee ,  Sejin Jang ,  Gyuhee Park ,  Younjoung Cho ,  Byungkeun Hwang

IPC: C07F7/08 ,  H01L21/768

Abstract: Silicon compounds may be represented by the following formula: Each of Ra, Rb, and Rc may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, Rd may be a C1-C7 alkyl group, a C1-C7 alkyl amino group, or a silyl group represented by a formula of *—Si(X1)(X2)(X3). Each of X1, X2, and X3 may be a hydrogen atom, a halogen atom, a C1-C7 alkyl group, an amino group, a C1-C7 alkyl amino group, or a C1-C7 alkoxy group, and * is a bonding site. In some embodiments, when Rb is the C1-C7 alkyl amino group and Rd is the C1-C7 alkyl group, Rb may be connected to Rd to form a ring. To manufacture an integrated circuit (IC) device, a silicon-containing film may be formed on a substrate using the silicon compound of the formula provided above.