公开(公告)号：US20250015100A1

公开(公告)日：2025-01-09

申请号：US18662034

申请日：2024-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsub Shim

IPC: H01L27/146

Abstract: An image sensor includes a photodiode disposed in a substrate and including an n-type impurity region, wherein the n-type impurity region is doped with n-type impurities, a transfer gate (TG) structure partially buried in the substrate and disposed on the n-type impurity region, a recess disposed at an upper surface of the substrate and being spaced apart from the TG structure, a floating diffusion (FD) region disposed under the recess and doped with n-type impurities, and an impurity region disposed at a portion of the substrate between the TG structure and the recess and doped with p-type impurities. An upper surface of the FD region is lower than an upper surface of the impurity region.

公开(公告)号：US12166049B2

公开(公告)日：2024-12-10

申请号：US17655582

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu Jin ,  Eunsub Shim ,  Jungchak Ahn

IPC: H01L27/146 ,  H04N25/704

Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface and a second surface opposite to each other. A semiconductor pattern is disposed on the first surface of the semiconductor substrate and it extends in a first direction perpendicular to the first surface. A buried transmission gate electrode is disposed in a transmission gate trench extending from the first surface of the semiconductor substrate to an interior of the semiconductor substrate. A first gate electrode at least partially surrounds a side wall of the semiconductor pattern and has a ring-shaped horizontal cross-section. A color filter is disposed on the second surface of the semiconductor substrate.

公开(公告)号：US11671705B2

公开(公告)日：2023-06-06

申请号：US17941302

申请日：2022-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub Shim ,  Kyungho Lee ,  Masato Fujita

IPC: H04N23/67 ,  G03B13/16 ,  H01L27/146

CPC classification number: H04N23/67 ,  G03B13/16 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14647

Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

公开(公告)号：US12191331B2

公开(公告)日：2025-01-07

申请号：US18319101

申请日：2023-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masato Fujita ,  Yunki Lee ,  Eunsub Shim ,  Kyungho Lee ,  Bumsuk Kim ,  Taehan Kim

IPC: H01L27/146 ,  H04N25/59 ,  H04N25/704 ,  H04N25/709 ,  H04N25/772

Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

公开(公告)号：US12176360B2

公开(公告)日：2024-12-24

申请号：US17501584

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub Shim ,  Kyungho Lee

IPC: H01L27/146

Abstract: An image sensor includes a pixel array including pixels, wherein each pixel includes at least one photodiode generating electrical charge and a pixel circuit providing a pixel signal based on the electrical charge. The images sensor also includes a logic circuit configured to generate an image based on the pixel signal, wherein the pixel circuit includes a parallel-connected first reset transistor and second reset transistor, and the logic circuit determines whether the second reset transistor is turned ON/OFF based on a level of incident light received by the at least one photodiode during an exposure time period.

公开(公告)号：US12087791B2

公开(公告)日：2024-09-10

申请号：US18080904

申请日：2022-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsub Shim ,  Kyungho Lee ,  Sungsoo Choi

IPC: H01L27/146 ,  H03M1/56 ,  H04N25/75 ,  H04N25/772

CPC classification number: H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/14645 ,  H03M1/56 ,  H04N25/75 ,  H04N25/772

Abstract: An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well.

公开(公告)号：US20240243142A1

公开(公告)日：2024-07-18

申请号：US18408834

申请日：2024-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghyuck MOON ,  Jueun Park ,  Hyuncheol Kim ,  Eunsub Shim

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor, including a shared pixel including two sub pixels of a 1X2 structure and sharing a floating diffusion region on each of the two sub pixels through a metal wiring, unit pixels surrounding the floating diffusion region, within the shared pixel, separated from each other by front-side deep trench isolation, and each including a photodiode, a transfer transistor adjacent to the floating diffusion region and on each of the unit pixels, a reset transistor and a selection transistor on a first unit pixel located in a first quadrant among the unit pixels, a conversion gain transistor on a second unit pixel located in a second quadrant among the unit pixels, and a source follower transistor on a third unit pixel located in a third quadrant and a fourth unit pixel located in a fourth quadrant among the unit pixels.

公开(公告)号：US20230127821A1

公开(公告)日：2023-04-27

申请号：US18080904

申请日：2022-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsub Shim ,  Kyungho Lee ,  Sungsoo ChoI

IPC: H01L27/146 ,  H03M1/56 ,  H04N25/75 ,  H04N25/772

Abstract: An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well.

公开(公告)号：US12041348B2

公开(公告)日：2024-07-16

申请号：US18138762

申请日：2023-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub Shim ,  Kyungho Lee ,  Masato Fujita

IPC: H04N23/67 ,  G03B13/16 ,  H01L27/146

CPC classification number: H04N23/67 ,  G03B13/16 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14647

Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

公开(公告)号：US11695024B2

公开(公告)日：2023-07-04

申请号：US16996047

申请日：2020-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Masato Fujita ,  Yunki Lee ,  Eunsub Shim ,  Kyungho Lee ,  Bumsuk Kim ,  Taehan Kim

IPC: H01L27/146 ,  H04N25/59 ,  H04N25/704 ,  H04N25/709 ,  H04N25/772

CPC classification number: H01L27/14612 ,  H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H04N25/59 ,  H04N25/704 ,  H04N25/709 ,  H04N25/772

Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.