公开(公告)号：US08993441B2

公开(公告)日：2015-03-31

申请号：US14189053

申请日：2014-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Do-Hyung Kim ,  Eun-Tae Kim ,  Sung-Lae Cho

IPC: H01L21/44 ,  H01L45/00

CPC classification number: H01L45/1616 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: A method of forming a thin layer and a method of manufacturing a phase change memory device, the method of forming a thin layer including providing a first deposition source onto a substrate, the first deposition source not including tellurium; and providing a second deposition source onto the substrate, the second deposition source including a first tellurium precursor represented by the following Formula 1 and a second tellurium precursor represented by following the Formula 2: Te(CH(CH3)2)2  Formula 1 Ten(CH(CH3)2)2  Formula 2 wherein, in Formula 2, n is an integer greater than or equal to 2.

Abstract translation: 一种形成薄层的方法和制造相变存储器件的方法，所述形成薄层的方法包括在基底上提供第一沉积源，所述第一沉积源不包括碲; 并且在所述衬底上提供第二沉积源，所述第二沉积源包括由下式1表示的第一碲前体和由下式2表示的第二碲前体：Te（CH（CH 3）2）2式1 10 CH（CH 3）2）2式2其中，在式2中，n是大于或等于2的整数。