公开(公告)号：US09653363B2

公开(公告)日：2017-05-16

申请号：US15167050

申请日：2016-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bok-Young Lee ,  Jeong-Yun Lee ,  Dong-Hyun Kim ,  Myeong-Cheol Kim ,  Dong-Woo Han

IPC: H01L21/336 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/02 ,  H01L21/306 ,  H01L29/66

CPC classification number: H01L21/823821 ,  H01L21/30604 ,  H01L21/823828 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/6656 ,  H01L29/66795

Abstract: Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.