公开(公告)号：US10088931B2

公开(公告)日：2018-10-02

申请号：US15351788

申请日：2016-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mi Jeong Kim ,  Chan Kwak ,  Junghwa Kim ,  Dong Su Ko ,  Kwanghee Kim ,  Jiye Kim

IPC: H05K1/09 ,  H05K1/00 ,  B32B15/04 ,  B32B15/01 ,  G06F3/041 ,  G06F3/045 ,  B32B15/02 ,  B32B15/08 ,  B22F1/00 ,  C22F1/14

Abstract: An electrical conductor includes a substrate; and a conductive layer disposed on the substrate and including a plurality of silver nanowires, wherein the silver nanowires exhibit a main peak assigned to a (111) crystal plane in an X-ray diffraction spectrum thereof, and a 2θ full width at half maximum (FWHM) of the main peak after Gaussian fitting is less than about 0.40 degrees.

公开(公告)号：US10325992B2

公开(公告)日：2019-06-18

申请号：US14854272

申请日：2015-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US20210376099A1

公开(公告)日：2021-12-02

申请号：US17400901

申请日：2021-08-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US20190312119A1

公开(公告)日：2019-10-10

申请号：US16432298

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae CHO ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/49 ,  H01L21/28

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US11735637B2

公开(公告)日：2023-08-22

申请号：US17400901

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L29/4236 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US11127828B2

公开(公告)日：2021-09-21

申请号：US16432298

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae Cho ,  Dongjin Lee ,  Ji Eun Lee ,  Kyoung-Ho Jung ,  Dong Su Ko ,  Yongsu Kim ,  Jiho Yoo ,  Sung Heo ,  Hyun Park ,  Satoru Yamada ,  Moonyoung Jeong ,  Sungjin Kim ,  Gyeongsu Park ,  Han Jin Lim

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L29/51

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.