公开(公告)号：USRE49793E1

公开(公告)日：2024-01-09

申请号：US17566169

申请日：2021-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US11323667B2

公开(公告)日：2022-05-03

申请号：US17170008

申请日：2021-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hoon Kim ,  Byungjun Park

IPC: H04N9/04 ,  H04N5/374 ,  H04N5/357 ,  H04N5/378

Abstract: An image sensor is disclosed. The image sensor includes a substrate including an active region and a dummy region, a plurality of unit pixels on the active region, a transparent conductive layer on a first surface of the substrate, a light-blocking layer on the transparent conductive layer and electrically connected to the transparent conductive layer, the light-blocking layer having a grid structure adjacent light transmission regions, and a pad electrically connected to the light-blocking layer, on the dummy region.

公开(公告)号：US20140246707A1

公开(公告)日：2014-09-04

申请号：US14191670

申请日：2014-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/148

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

Abstract translation: 图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。 沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。 导电互连耦合到公共偏置线，并且被配置为向其提供负电压。 还讨论了相关的制造方法。

公开(公告)号：US20240387590A1

公开(公告)日：2024-11-21

申请号：US18515334

申请日：2023-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinpyo Kim ,  Byungjun Park ,  Jimin Jeun ,  Hakyu Choi

IPC: H01L27/146

Abstract: An image sensor includes a substrate structure including a sensor array region and a pad region adjacent to the sensor array region. The substrate structure includes a first substrate structure and a second substrate structure. The first substrate structure is on the second substrate structure. The image sensor includes a penetrating structure including a first conductive material layer and a second conductive material layer in at least a portion of the first substrate structure. The second conductive material layer is electrically connected to the first conductive material layer and extends into the first substrate structure.

公开(公告)号：US10910426B2

公开(公告)日：2021-02-02

申请号：US16580024

申请日：2019-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungjun Park ,  Jinju Jeon ,  Younghwan Choi

IPC: H01L27/146

Abstract: A semiconductor device is described which includes a substrate, an interlayer insulating layer provided below the substrate and including a via pad therein, a through via located at least partially within a via hole passing through the substrate and a portion of the interlayer insulating layer, a connection pad on the substrate, and a pad isolation pattern formed in the substrate to be located around the connection pad and the through via. The pad isolation pattern includes a plurality of bent portions having protrusions and recesses when viewed from a top view. As a result, cracks may be prevented from forming or growing in the semiconductor device.

公开(公告)号：US09721989B2

公开(公告)日：2017-08-01

申请号：US15349227

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US20200077055A1

公开(公告)日：2020-03-05

申请号：US16392916

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Hoon Kim ,  Byungjun Park

IPC: H04N9/04 ,  H04N5/378 ,  H04N5/357 ,  H04N5/374

Abstract: An image sensor is disclosed. The image sensor includes a substrate including an active region and a dummy region, a plurality of unit pixels on the active region, a transparent conductive layer on a first surface of the substrate, a light-blocking layer on the transparent conductive layer and electrically connected to the transparent conductive layer, the light-blocking layer having a grid structure adjacent light transmission regions, and a pad electrically connected to the light-blocking layer, on the dummy region.

公开(公告)号：US09780142B1

公开(公告)日：2017-10-03

申请号：US15630498

申请日：2017-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US09754994B2

公开(公告)日：2017-09-05

申请号：US15349227

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

公开(公告)号：US20170062513A1

公开(公告)日：2017-03-02

申请号：US15349227

申请日：2016-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

Abstract translation: 图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。 沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。 导电互连耦合到公共偏置线，并且被配置为向其提供负电压。 还讨论了相关的制造方法。