IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240387590A1

    公开(公告)日:2024-11-21

    申请号:US18515334

    申请日:2023-11-21

    Abstract: An image sensor includes a substrate structure including a sensor array region and a pad region adjacent to the sensor array region. The substrate structure includes a first substrate structure and a second substrate structure. The first substrate structure is on the second substrate structure. The image sensor includes a penetrating structure including a first conductive material layer and a second conductive material layer in at least a portion of the first substrate structure. The second conductive material layer is electrically connected to the first conductive material layer and extends into the first substrate structure.

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