公开(公告)号：US12243892B2

公开(公告)日：2025-03-04

申请号：US17570884

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon Kim ,  Jinju Jeon ,  Heegeun Jeong

IPC: H01L27/146 ,  H04N25/633

Abstract: An image sensor including: a semiconductor substrate having a first surface and a second surface; a pixel device isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the pixel device isolation film defines pixels in the semiconductor substrate, and includes a conductive layer; and a device isolation structure located inside a device isolation trench that extends from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the device isolation structure includes a conductive liner electrically connected to the conductive layer, wherein a negative bias is applied to the conductive layer and the conductive liner.

公开(公告)号：US10910426B2

公开(公告)日：2021-02-02

申请号：US16580024

申请日：2019-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungjun Park ,  Jinju Jeon ,  Younghwan Choi

IPC: H01L27/146

Abstract: A semiconductor device is described which includes a substrate, an interlayer insulating layer provided below the substrate and including a via pad therein, a through via located at least partially within a via hole passing through the substrate and a portion of the interlayer insulating layer, a connection pad on the substrate, and a pad isolation pattern formed in the substrate to be located around the connection pad and the through via. The pad isolation pattern includes a plurality of bent portions having protrusions and recesses when viewed from a top view. As a result, cracks may be prevented from forming or growing in the semiconductor device.