公开(公告)号：US20250157542A1

公开(公告)日：2025-05-15

申请号：US18810861

申请日：2024-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Sik HAM ,  ByeongChan KO ,  Sanghun KIM

IPC: G11C16/10 ,  G11C16/04 ,  G11C16/08 ,  G11C16/34 ,  H10B43/27 ,  H10B43/35

Abstract: A method of programming a non-volatile memory device which includes a first cell string and a second cell string connected to a same bit line and sharing a first ground selection line, and a third cell string and a fourth cell string connected to the same bit line and sharing a second ground selection line, includes performing a ground separate initial precharge operation, in which a first voltage is applied to the first ground selection line and a second voltage is applied to the second ground selection line, based on the first cell string being selected as a selected cell string, performing a program voltage applying operation in which a program voltage is applied to a word line selected as a selected word line from among a plurality of word lines, and performing a verify operation in which a verify voltage is applied to the selected word line.