公开(公告)号：US20200020717A1

公开(公告)日：2020-01-16

申请号：US16265688

申请日：2019-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： BONGYONG LEE ,  TAE HUN KIM ,  Minkyung BAE

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11556

Abstract: A three-dimensional (3D) semiconductor memory device may include a stack structure including gate electrodes sequentially stacked on a substrate, and a vertical channel penetrating the stack structure. The gate electrodes may include a ground selection gate electrode, a cell gate electrode, a string selection gate electrode, and an erase gate electrode, which are sequentially stacked on the substrate.