Abstract:
An organic light emitting diode includes: a first electrode; a second electrode facing the first electrode; a light emission layer between the first electrode and the second electrode; an electron injection layer between the second electrode and the light emission layer; and a buffer layer between the electron injection layer and the second electrode, where the electron injection layer includes a dipolar material and a first metal, and the buffer layer includes a metal having a work function of 4.0 eV or less.
Abstract:
An organic light emitting diode includes: a first electrode; a second electrode facing the first electrode; a light emission layer between the first electrode and the second electrode; an electron injection layer between the second electrode and the light emission layer; and a buffer layer between the electron injection layer and the second electrode, where the electron injection layer includes a dipolar material and a first metal, and the buffer layer includes a metal having a work function of 4.0 eV or less.
Abstract:
An organic light emitting diode device includes a first electrode, a second electrode opposite the first electrode, and an emission layer between the first and second electrodes. The first electrode includes a Ag—Mg alloy including a greater amount of Ag than Mg.
Abstract:
An organic light emitting diode includes: a first electrode; a second electrode facing the first electrode; a light emission layer between the first electrode and the second electrode; an electron injection layer between the second electrode and the light emission layer; and a buffer layer between the electron injection layer and the second electrode, where the electron injection layer includes a dipolar material and a first metal, and the buffer layer includes a metal having a work function of 4.0 eV or less.
Abstract:
A quantum-dots containing multi-component inorganic oxide thin film is provided to include an amorphous inorganic oxide bulk region and a plurality of crystalline inorganic oxide regions, wherein the crystalline inorganic oxide regions are discontinuously formed to be surrounded by the amorphous inorganic oxide of the bulk region.