公开(公告)号：US20150053135A1

公开(公告)日：2015-02-26

申请号：US14187471

申请日：2014-02-24

Applicant: Samsung Display Co., Ltd.

Inventor： Yung-Bin CHUNG ,  Jun-Hyuck JEON ,  Yeon-Taek JUNG ,  Seok-Bae KO ,  Myoung-Jae KIM ,  Jin-Hyuck SONG ,  Eun-A YU ,  Seung-Kyeng CHO ,  Ji-Hyun HAM

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32577 ,  H01J37/32091 ,  Y10T428/24628

Abstract: A strap for a plasma processing apparatus includes a main body, and a protrusion pattern defined in the main body. The main body may include a binding part defined at opposing ends thereof. The protrusion pattern may include a protrusion.

Abstract translation: 用于等离子体处理装置的带包括主体和限定在主体中的突起图案。 主体可以包括限定在其相对端的绑定部。 突起图案可以包括突起。

公开(公告)号：US20170104048A1

公开(公告)日：2017-04-13

申请号：US15210563

申请日：2016-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Yung-Bin CHUNG ,  Bo-Geon JEON ,  Eun-Jeong CHO ,  Hye-Hyang PARK ,  Sung-Hoon YANG ,  Woo-Seok JEON ,  Joo-Hee JEON ,  Chaun-Gi CHOI

IPC: H01L27/32

CPC classification number: H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L51/5253

Abstract: A substrate structure may be used in a display device. The substrate structure may include a base substrate, a transistor, and a silicon oxynitride layer. The transistor may include a semiconductor member and a gate electrode and may overlap the base substrate. The silicon oxynitride layer may directly contact at least one of the base substrate, the semiconductor member, and the gate electrode and may include (and/or contain) a hydrogen atom set. A hydrogen concentration in the silicon oxynitride layer may be greater than or equal to 1.52 atomic percent.