THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US20150028327A1

    公开(公告)日:2015-01-29

    申请号:US14330859

    申请日:2014-07-14

    Abstract: A thin film transistor includes a substrate, a gate electrode, a buffer layer, a gate insulating layer, an active layer, an etching stop layer, a source electrode and a drain electrode. The gate electrode is formed on the substrate. The buffer layer partially covers both side portions of the gate electrode. The gate insulating layer covers the gate electrode and the buffer layer. The active layer is formed on the gate insulating layer. The etching stop layer is formed on the active layer, and has a first opening and a second opening on the active layer. The source electrode is formed on the etching stop layer, and contacts with the active layer through the first opening. The drain electrode is formed on the etching stop layer, and is contacted with the active layer through the second opening.

    Abstract translation: 薄膜晶体管包括基板,栅电极,缓冲层,栅极绝缘层,有源层,蚀刻停止层,源电极和漏电极。 栅电极形成在基板上。 缓冲层部分地覆盖栅电极的两侧部分。 栅极绝缘层覆盖栅电极和缓冲层。 有源层形成在栅绝缘层上。 蚀刻停止层形成在有源层上,并且在有源层上具有第一开口和第二开口。 源电极形成在蚀刻停止层上,并通过第一开口与有源层接触。 漏电极形成在蚀刻停止层上,并通过第二开口与有源层接触。

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