公开(公告)号：US20140141574A1

公开(公告)日：2014-05-22

申请号：US14163873

申请日：2014-01-24

Applicant: Samsung Display Co., Ltd.

Inventor： Zhi-Feng Zhan ,  Seung-Gyu Tae ,  Deok-Hoi Kim

IPC: H01L27/12

CPC classification number: H01L27/1259 ,  G02F1/136213 ,  H01L27/1255 ,  H01L28/87

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract translation: 提供了具有增加的电容的平板显示装置和制造平板显示装置的方法。 平板显示装置包括：多个像素区，分别位于栅极线，数据线和公共电压线的交叉区域; 位于栅极线和数据线彼此交叉的区域的薄膜晶体管（TFT），所述TFT包括栅电极，源电极和漏电极; 以及存储电容器，位于公共电压线和漏极彼此交叉的区域，所述保持电容器包括第一，第二和第三存储电极。

公开(公告)号：US09373670B2

公开(公告)日：2016-06-21

申请号：US14314332

申请日：2014-06-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung-Gyu Tae

IPC: H01L27/32 ,  G03F1/00

CPC classification number: H01L27/3262 ,  G03F1/00 ,  H01L27/1222 ,  H01L27/3265 ,  H01L29/78696

Abstract: A semiconductor device includes a semiconductor layer over a substrate. The semiconductor layer changes direction at least twice and has at least two different widths in the same plane. The length of a current path through the semiconductor layer is greater than a shortest path through the semiconductor layer in the same plane.

Abstract translation: 半导体器件包括在衬底上的半导体层。 半导体层改变方向至少两次并且在同一平面中具有至少两个不同的宽度。 通过半导体层的电流通路的长度大于在同一平面内通过半导体层的最短路径。

公开(公告)号：US20150194451A1

公开(公告)日：2015-07-09

申请号：US14665966

申请日：2015-03-23

Applicant: Samsung Display Co., Ltd.

Inventor： Seung-Gyu Tae ,  Deok-Hoi Kim ,  Chung Yi

IPC: H01L27/12 ,  H01L29/66 ,  G02F1/1341 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: H01L27/1288 ,  G02F1/133703 ,  G02F1/1341 ,  G02F1/136213 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/1393 ,  G02F2001/133792 ,  G02F2001/136295 ,  H01L27/1255 ,  H01L29/66765

Abstract: A liquid crystal display device is disclosed. The device includes: a first substrate, a thin film transistor formed in a first, non-transmissive region on the first substrate, including a gate electrode, a source electrode and a drain electrode, and a storage capacitor formed in a second, transmissive region on the first substrate, where a first electrode and a second electrode of the storage capacitor are made of a transparent conductive material

Abstract translation: 公开了一种液晶显示装置。 该器件包括：第一衬底，形成在第一衬底上的第一非透射区域中的薄膜晶体管，包括栅电极，源电极和漏电极，以及形成在第二透射区域中的存储电容器 在第一基板上，存储电容器的第一电极和第二电极由透明导电材料制成

公开(公告)号：US09012273B2

公开(公告)日：2015-04-21

申请号：US14163873

申请日：2014-01-24

Applicant: Samsung Display Co., Ltd.

Inventor： Zhi-Feng Zhan ,  Seung-Gyu Tae ,  Deok-Hoi Kim

IPC: H01L27/12 ,  H01L49/02 ,  G02F1/1362

CPC classification number: H01L27/1259 ,  G02F1/136213 ,  H01L27/1255 ,  H01L28/87

Abstract: A flat panel display device having increased capacitance and a method of manufacturing the flat panel display device are provided. A flat panel display device includes: a plurality of pixel areas, each located at a crossing region of a gate line, a data line, and a common voltage line; a thin film transistor (TFT) located at a region where the gate line and the data line cross each other, the TFT including a gate electrode, a source electrode, and a drain electrode; and a storage capacitor located at a region where the common voltage line and the drain electrode cross each other, the storage capacitor including first, second, and a third storage electrodes.

Abstract translation: 提供了具有增加的电容的平板显示装置和制造平板显示装置的方法。 平板显示装置包括：多个像素区，分别位于栅极线，数据线和公共电压线的交叉区域; 位于栅极线和数据线彼此交叉的区域的薄膜晶体管（TFT），所述TFT包括栅电极，源电极和漏电极; 以及存储电容器，位于公共电压线和漏极彼此交叉的区域，所述保持电容器包括第一，第二和第三存储电极。