Thin film transistor substrate, method of manufacturing the same, and display device including the same

    公开(公告)号:US10861920B2

    公开(公告)日:2020-12-08

    申请号:US16412059

    申请日:2019-05-14

    Abstract: A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.

    Display panel and method of fabricating the same

    公开(公告)号:US11515376B2

    公开(公告)日:2022-11-29

    申请号:US17063698

    申请日:2020-10-05

    Abstract: A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

    DISPLAY APPARATUS
    3.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20240321909A1

    公开(公告)日:2024-09-26

    申请号:US18509356

    申请日:2023-11-15

    Abstract: A display apparatus includes a substrate having a display area and a peripheral area outside the display area, a transistor in the display area and a light-emitting element electrically connected to the transistor, and a scan driver in the peripheral area, wherein the scan driver includes a first transistor disposed on the substrate and including a first semiconductor layer comprising an oxide semiconductor and a first gate electrode overlapping the first semiconductor layer, a second transistor disposed on the substrate and including a second semiconductor layer comprising a silicon semiconductor and a second gate electrode overlapping the second semiconductor layer, and insulating layers disposed on the substrate and defining dummy holes not overlapping the first semiconductor layer and the second semiconductor layer, wherein the dummy holes are spaced apart from the first semiconductor layer and the second semiconductor layer and overlap dummy semiconductor layers adjacent to the first semiconductor layer.

    DISPLAY PANEL AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230087942A1

    公开(公告)日:2023-03-23

    申请号:US18059800

    申请日:2022-11-29

    Abstract: A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

    DISPLAY DEVICE
    5.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20240290278A1

    公开(公告)日:2024-08-29

    申请号:US18513695

    申请日:2023-11-20

    CPC classification number: G09G3/3266 G09G3/32 G09G2310/0267 G09G2330/021

    Abstract: A display device includes a display area and a peripheral area, a transistor and a display element electrically connected to the thin-film transistor, the transistor and the display element being disposed in the display area, and a scan driver disposed in the peripheral area, wherein the scan driver includes a gate electrode having a plurality of prongs extending in a first direction and electrically connected to each other, and in a second direction intersecting the first direction, a first dummy gate electrode disposed on one side of the plurality of prongs and a second dummy gate electrode disposed on another side of the plurality of prongs.

    Display panel and method of fabricating the same

    公开(公告)号:US10797123B2

    公开(公告)日:2020-10-06

    申请号:US16115730

    申请日:2018-08-29

    Abstract: A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower opening is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper opening is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper openings. A luminescent device is disposed on the organic layer and overlaps the first region.

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