公开(公告)号：US08760598B2

公开(公告)日：2014-06-24

申请号：US13946674

申请日：2013-07-19

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Hyuk Lee ,  Bon-Yong Koo ,  Sun-Mi Kim ,  Ju Hyeon Baek ,  Ji Young Jeong

IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/13

CPC classification number: H01L33/08 ,  G02F1/133514 ,  G02F1/136213 ,  G02F1/136259 ,  G02F2001/136263 ,  G02F2001/136272 ,  H01L22/14 ,  H01L27/124 ,  H01L29/41733 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel.

Abstract translation: 薄膜晶体管阵列面板包括：基板; 栅极线和存储电极，设置在所述基板上; 跨越栅极线和存储电极线的数据线; 与栅极线和数据线连接的薄膜晶体管; 以及连接到薄膜晶体管的像素电极。 存储电极包括与栅极线平行的第一存储电极，从第一存储电极在数据线的相对侧延伸的第二存储电极，与数据线交叉并连接成对的第二存储电极的连接部分 以及跨越栅极线并将第二存储电极连接到相邻像素的第二存储电极的连接桥。

公开(公告)号：US09459505B2

公开(公告)日：2016-10-04

申请号：US14486378

申请日：2014-09-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Bong-Jun Lee ,  Ji Young Jeong ,  Seul Ki Kim ,  Ju Hyeon Baek ,  Kyung-Seob Choi

IPC: G02F1/1343 ,  G02F1/1362 ,  G02F1/1337

CPC classification number: G02F1/136286 ,  G02F1/133707 ,  G02F1/134309 ,  G02F2001/134318

Abstract: A display device includes a first insulation substrate, a gate line disposed on the first insulation substrate, a semiconductor layer disposed on the gate line, a data line insulated from and crossing the gate line and including a source electrode and a drain electrode facing the source electrode, a first insulating layer disposed on the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a second insulating layer disposed on the pixel electrode, a common electrode disposed on the second insulating layer, and a shielding pattern part disposed on a same layer as the pixel electrode and overlapping the data line.

Abstract translation: 显示装置包括第一绝缘基板，设置在第一绝缘基板上的栅极线，设置在栅极线上的半导体层，与栅极线绝缘并与栅极线交叉的数据线，并且包括面向源极的源电极和漏电极 电极，设置在源电极和漏电极上的第一绝缘层，与漏电极电连接的像素电极，设置在像素电极上的第二绝缘层，设置在第二绝缘层上的公共电极和屏蔽图案 部分设置在与像素电极相同的层上并与数据线重叠。

公开(公告)号：US20130302915A1

公开(公告)日：2013-11-14

申请号：US13946674

申请日：2013-07-19

Applicant: Samsung display Co., Ltd.

Inventor： Jong-Hyuk Lee ,  Bon-Yong Koo ,  Sun-Mi Kim ,  Ju Hyeon Baek ,  Ji Young Jeong

IPC: H01L21/66

CPC classification number: H01L33/08 ,  G02F1/133514 ,  G02F1/136213 ,  G02F1/136259 ,  G02F2001/136263 ,  G02F2001/136272 ,  H01L22/14 ,  H01L27/124 ,  H01L29/41733 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel.

Abstract translation: 薄膜晶体管阵列面板包括：基板; 栅极线和存储电极，设置在所述基板上; 跨越栅极线和存储电极线的数据线; 与栅极线和数据线连接的薄膜晶体管; 以及连接到薄膜晶体管的像素电极。 存储电极包括与栅极线平行的第一存储电极，从第一存储电极在数据线的相对侧延伸的第二存储电极，与数据线交叉并连接成对的第二存储电极的连接部分 以及跨越栅极线并将第二存储电极连接到相邻像素的第二存储电极的连接桥。

公开(公告)号：US20130299833A1

公开(公告)日：2013-11-14

申请号：US13946652

申请日：2013-07-19

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Hyuk Lee ,  Bon-Yong Koo ,  Sun-Mi Kim ,  Ju Hyeon Baek ,  Ji Young Jeong

IPC: H01L33/08

CPC classification number: H01L33/08 ,  G02F1/133514 ,  G02F1/136213 ,  G02F1/136259 ,  G02F2001/136263 ,  G02F2001/136272 ,  H01L22/14 ,  H01L27/124 ,  H01L29/41733 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel.

公开(公告)号：US20150268528A1

公开(公告)日：2015-09-24

申请号：US14486378

申请日：2014-09-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Bong-Jun Lee ,  Ji Young Jeong ,  Seul Ki Kim ,  Ju Hyeon Baek ,  Kyung-Seob Choi

IPC: G02F1/1362 ,  G02F1/1343

CPC classification number: G02F1/136286 ,  G02F1/133707 ,  G02F1/134309 ,  G02F2001/134318

Abstract: A display device includes a first insulation substrate, a gate line disposed on the first insulation substrate, a semiconductor layer disposed on the gate line, a data line insulated from and crossing the gate line and including a source electrode and a drain electrode facing the source electrode, a first insulating layer disposed on the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a second insulating layer disposed on the pixel electrode, a common electrode disposed on the second insulating layer, and a shielding pattern part disposed on a same layer as the pixel electrode and overlapping the data line.

Abstract translation: 显示装置包括第一绝缘基板，设置在第一绝缘基板上的栅极线，设置在栅极线上的半导体层，与栅极线绝缘并与栅极线交叉的数据线，并且包括面向源极的源电极和漏电极 电极，设置在源电极和漏电极上的第一绝缘层，与漏电极电连接的像素电极，设置在像素电极上的第二绝缘层，设置在第二绝缘层上的公共电极和屏蔽图案 部分设置在与像素电极相同的层上并与数据线重叠。

公开(公告)号：US09093593B2

公开(公告)日：2015-07-28

申请号：US13946652

申请日：2013-07-19

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Hyuk Lee ,  Bon-Yong Koo ,  Sun-Mi Kim ,  Ju Hyeon Baek ,  Ji Young Jeong

IPC: G02F1/13 ,  H01L33/08 ,  H01L27/12 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/66 ,  H01L29/417

CPC classification number: H01L33/08 ,  G02F1/133514 ,  G02F1/136213 ,  G02F1/136259 ,  G02F2001/136263 ,  G02F2001/136272 ,  H01L22/14 ,  H01L27/124 ,  H01L29/41733 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor array panel includes: a substrate; a gate line and a storage electrode that are disposed on the substrate; a data line that crosses the gate line and storage electrode line; a thin film transistor that is connected with the gate line and data line; and a pixel electrode that is connected to the thin film transistor. The storage electrode includes a first storage electrode that is parallel to the gate line, second storage electrodes that extend on opposing sides of the data line from the first storage electrode, a connection part that crosses the data line and connects pairs of the second storage electrodes, and a connection bridge that crosses the gate line and connects a second storage electrode to a second storage electrode of an adjacent pixel.

Abstract translation: 薄膜晶体管阵列面板包括：基板; 栅极线和存储电极，设置在所述基板上; 跨越栅极线和存储电极线的数据线; 与栅极线和数据线连接的薄膜晶体管; 以及连接到薄膜晶体管的像素电极。 存储电极包括与栅极线平行的第一存储电极，从第一存储电极在数据线的相对侧延伸的第二存储电极，与数据线交叉并连接成对的第二存储电极的连接部分 以及跨越栅极线并将第二存储电极连接到相邻像素的第二存储电极的连接桥。