公开(公告)号：US09721901B2

公开(公告)日：2017-08-01

申请号：US14643035

申请日：2015-03-10

Applicant: Samsung Display Co., Ltd.

Inventor： Jihyeon Ryu

IPC: H01L23/544 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L23/544 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/66969 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a thin-film transistor substrate including: a substrate; a thin-film transistor formed on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; an identification (ID) mark formed on the substrate; and a metal layer contacting an upper surface of the ID mark.

公开(公告)号：US11588002B2

公开(公告)日：2023-02-21

申请号：US16719862

申请日：2019-12-18

Applicant: Samsung Display Co., Ltd.

Inventor： Younggug Seol ,  Dongyoon So ,  Jihyeon Ryu ,  Kyungmin Park

IPC: H01L27/32 ,  G06F3/044 ,  H01L51/52

Abstract: A display device may include a first substrate, a second substrate, a plurality of display elements, a sealing unit, and a common power supply line. The second substrate may overlap the first substrate. The display elements may be positioned between the first substrate and the second substrate. The sealing unit may surround the display elements in a plan view of the display device and may be arranged between the first substrate and the second substrate. The common power supply line may at least partially surround the display elements in the plan view of the display device and may include a protrusion. The protrusion may protrude beyond the sealing unit and may be positioned between the sealing unit and a first edge of the first substrate in the plan view of the display device.

公开(公告)号：US20160086892A1

公开(公告)日：2016-03-24

申请号：US14643035

申请日：2015-03-10

Applicant: Samsung Display Co., Ltd.

Inventor： Jihyeon Ryu

IPC: H01L23/544 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L23/544 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/66969 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a thin-film transistor substrate including: a substrate; a thin-film transistor formed on the substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; an identification (ID) mark formed on the substrate; and a metal layer contacting an upper surface of the ID mark.

Abstract translation: 公开了一种薄膜晶体管基板，包括：基板; 形成在所述基板上并且包括有源层，栅电极，源电极和漏电极的薄膜晶体管; 形成在基板上的识别（ID）标记; 以及与ID标记的上表面接触的金属层。