公开(公告)号：US20210033853A1

公开(公告)日：2021-02-04

申请号：US16802011

申请日：2020-02-26

Applicant: Samsung Display Co., Ltd.

Inventor： Jihwan KIM ,  Jongjun BAEK ,  Byungsoo SO ,  Hiroshi OKUMURA

IPC: G02B26/12 ,  G02F1/07 ,  H01L21/67 ,  H01L21/02 ,  B23K26/064 ,  B23K26/082 ,  B23K26/354

Abstract: Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.