公开(公告)号：US09464991B2

公开(公告)日：2016-10-11

申请号：US14094051

申请日：2013-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Alexander Voronov ,  Suk-Ho Lee ,  Jae-Seung Yoo ,  Kyung-Hoe Heo ,  Gyoo-Wan Han

IPC: G01N21/64 ,  G01N21/95

CPC classification number: G01N21/6489 ,  G01N21/9501

Abstract: A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2.

Abstract translation: 一种用于检查多晶硅层的方法包括：向多晶硅层辐射激发光; 并且检测由激发光产生的光致发光信号，其中激发光的平均功率具有1W / cm 2至10W / cm 2的范围，并且激发光的峰值功率具有100W / cm 2至1000W的范围 / cm2。