公开(公告)号：US20160210909A1

公开(公告)日：2016-07-21

申请号：US14968454

申请日：2015-12-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sanghyun LEE ,  Geunhyuk CHOI ,  Hyejung HONG

IPC: G09G3/34 ,  G09G3/36 ,  H05B33/08

CPC classification number: G09G3/3406 ,  G09G3/3648 ,  G09G2320/062 ,  G09G2320/064 ,  H05B33/086

Abstract: A backlight unit of a display apparatus includes a power converter generating a light source power voltage in response to a power control signal, a first node, a second node, a light emitting element connected between the first node and the second node, and a controller connected to the second node. The light emitting element is configured to receive the light source power voltage through the first node, and the controller is configured to output the power control signal for controlling current flowing through the light emitting element in response to a dimming signal. When the dimming signal has a first level, the controller outputs the power control signal to turn off the power converter.

Abstract translation: 显示装置的背光单元包括功率转换器，其响应于功率控制信号产生光源电压，第一节点，第二节点，连接在第一节点和第二节点之间的发光元件，以及控制器 连接到第二个节点。 发光元件被配置为通过第一节点接收光源电力电压，并且控制器被配置为输出用于响应于调光信号控制流过发光元件的电流的功率控制信号。 当调光信号具有第一电平时，控制器输出电源控制信号以关闭电源转换器。

公开(公告)号：US20210384229A1

公开(公告)日：2021-12-09

申请号：US17320963

申请日：2021-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： Sunwoo LEE ,  Kihyun KIM ,  Younggil PARK ,  Seulgi LEE ,  Geunhyuk CHOI ,  Jaebum HAN

IPC: H01L27/12 ,  H01L29/786

Abstract: A display apparatus includes a first silicon transistor including a first semiconductor layer including a silicon-based semiconductor and a first gate electrode; a first oxide transistor including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide-based semiconductor; an upper insulating layer on the first and second semiconductor layers; and a first connection electrode on the upper insulating layer, electrically connected to the first semiconductor layer through a first contact hole of the upper insulating layer, and electrically connected to the second semiconductor layer through a second contact hole of the upper insulating layer. The second semiconductor layer includes a channel region, a source region, and a drain region, and a first distance between the channel region of the second semiconductor layer and the first contact hole is about 2 μm or greater.