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公开(公告)号：US08865485B2
公开(公告)日：2014-10-21
申请号：US14218088
申请日：2014-03-18
Applicant: Samsung Display Co., Ltd.
Inventor： Min-Chul Shin , Jong-Moo Huh , Bong-Ju Kim , Yun-Gyu Lee
CPC classification number: H01L51/56 , H01L27/1288 , H01L27/3248
Abstract: An organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes: a substrate main body; a polycrystalline silicon layer pattern including a polycrystalline active layer formed on the substrate main body and a first capacitor electrode; a gate insulating layer pattern formed on the polycrystalline silicon layer pattern; a first conductive layer pattern including a gate electrode and a second capacitor electrode that are formed on the gate insulating layer pattern; an interlayer insulating layer pattern formed on the first conductive layer pattern; and a second conductive layer pattern including a source electrode, a drain electrode and a pixel electrode that are formed on the interlayer insulating layer pattern. The gate insulating layer pattern is patterned at a same time with any one of the polycrystalline silicon layer pattern and the first conductive layer pattern.
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公开(公告)号：US09142780B2
公开(公告)日：2015-09-22
申请号：US14049119
申请日：2013-10-08
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Min-Chul Shin , Jong-Moo Huh , Bong-Ju Kim , Yun-Gyu Lee
CPC classification number: H01L51/0023 , H01L27/1255 , H01L27/1288 , H01L27/3244 , H01L27/3262 , H01L51/5203 , H01L2227/323
Abstract: A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.
Abstract translation: 显示装置包括基板，在基板上包括栅电极和第一电容器电极的第一导电膜图案，第一导电膜图案上的栅极绝缘层图案，包括有源层和第二电容器的多晶硅膜图案 栅极绝缘层图案上的电极，多晶硅膜图案上的层间绝缘层，穿过栅极绝缘层图案的多个第一接触孔和层间绝缘层，以暴露第一导电膜图案的一部分，多个 第二接触孔穿过层间绝缘层以暴露多晶硅膜图案的一部分，以及在层间绝缘层上包括源电极，漏电极和像素电极的第二导电膜图案。
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公开(公告)号：US20140038333A1
公开(公告)日：2014-02-06
申请号：US14049119
申请日：2013-10-08
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Min-Chul Shin , Jong-Moo Huh , Bong-Ju Kim , Yun-Gyu Lee
IPC: H01L51/00
CPC classification number: H01L51/0023 , H01L27/1255 , H01L27/1288 , H01L27/3244 , H01L27/3262 , H01L51/5203 , H01L2227/323
Abstract: A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.
Abstract translation: 显示装置包括基板，在基板上包括栅电极和第一电容器电极的第一导电膜图案，第一导电膜图案上的栅极绝缘层图案，包括有源层和第二电容器的多晶硅膜图案 栅极绝缘层图案上的电极，多晶硅膜图案上的层间绝缘层，穿过栅极绝缘层图案的多个第一接触孔和层间绝缘层，以暴露第一导电膜图案的一部分，多个 第二接触孔穿过层间绝缘层以暴露多晶硅膜图案的一部分，以及在层间绝缘层上包括源电极，漏电极和像素电极的第二导电膜图案。
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