Display device and method of fabricating the same

    公开(公告)号:US11588053B2

    公开(公告)日:2023-02-21

    申请号:US17149164

    申请日:2021-01-14

    Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

    Display device and method of manufacturing the display device

    公开(公告)号:US11335869B2

    公开(公告)日:2022-05-17

    申请号:US16906866

    申请日:2020-06-19

    Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.

    Display device
    9.
    发明授权

    公开(公告)号:US12094977B2

    公开(公告)日:2024-09-17

    申请号:US18109301

    申请日:2023-02-14

    CPC classification number: H01L29/78606 H01L27/1225 H10K59/1213

    Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

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