Display device
    2.
    发明授权

    公开(公告)号:US11871608B2

    公开(公告)日:2024-01-09

    申请号:US17417422

    申请日:2019-10-14

    CPC classification number: H10K50/85 H10K59/00

    Abstract: A display device having an improved light-extraction efficiency and a reduced color sense variation according to a viewing angle includes a pixel electrode on a substrate, an insulating layer defining an emission area via an opening that covers edges of the pixel electrode and exposes a center portion of the pixel electrode, a first light extraction pattern on the pixel electrode, the first light extraction pattern having a side surface inclined at a first angle, and a second light extraction pattern surrounding the first light extraction pattern on an outer portion of the first light extraction pattern, the second light extraction pattern having a side surface inclined at a second angle that is less than the first angle.

    Display device and method of manufacturing display device

    公开(公告)号:US11599229B2

    公开(公告)日:2023-03-07

    申请号:US17295776

    申请日:2019-09-23

    Abstract: Provided is a display device including a display panel having a plurality of pixel regions, a first insulating layer on the display panel, having a first refractive index, and having a plurality of first openings defined in regions which overlap the plurality of pixel regions, a second insulating layer directly on the first insulating layer and having a plurality of second openings defined in regions which correspond to the plurality of first openings, and a third insulating layer covering the display panel, the first insulating layer, and the second insulating layer and having a second refractive index higher than the first refractive index, wherein the third insulating layer may overlap the plurality of pixel regions on a plane.

    Thin film transistor substrate and organic light-emitting diode (OLED) display having the same
    6.
    发明授权
    Thin film transistor substrate and organic light-emitting diode (OLED) display having the same 有权
    薄膜晶体管基板和具有相同的有机发光二极管(OLED)显示器

    公开(公告)号:US09425251B2

    公开(公告)日:2016-08-23

    申请号:US14278235

    申请日:2014-05-15

    Abstract: A thin film transistor substrate and an organic light-emitting diode (OLED) display are disclosed. In one aspect, the OLED includes a thin film transistor substrate. The thin film transistor substrate includes a substrate, a source electrode formed over the substrate, a drain electrode formed over the substrate and spaced apart from the source electrode, an oxide semiconductor layer, and a gate electrode. The oxide semiconductor layer includes a source area at least partially overlapping the source electrode, a drain area at least partially overlapping the drain electrode, and a channel area formed between the source area and the drain area. The gate electrode, which is insulated from the oxide semiconductor layer, has a first width at a first end thereof, a second width at a second end opposite to the first end thereof and the first width is different from the second width.

    Abstract translation: 公开了薄膜晶体管基板和有机发光二极管(OLED)显示器。 在一个方面,OLED包括薄膜晶体管衬底。 薄膜晶体管基板包括基板,形成在基板上的源电极,形成在基板上并与源电极间隔开的漏电极,氧化物半导体层和栅电极。 氧化物半导体层包括至少部分地与源电极重叠的源极区域,至少部分地与漏极电极重叠的漏极区域和在源极区域和漏极区域之间形成的沟道区域。 与氧化物半导体层绝缘的栅电极在其第一端具有第一宽度,在与其第一端相对的第二端处具有第二宽度,并且第一宽度不同于第二宽度。

    THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY HAVING THE SAME
    7.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY HAVING THE SAME 有权
    薄膜晶体管基板和有机发光二极管(OLED)显示器

    公开(公告)号:US20150129844A1

    公开(公告)日:2015-05-14

    申请号:US14278235

    申请日:2014-05-15

    Abstract: A thin film transistor substrate and an organic light-emitting diode (OLED) display are disclosed. In one aspect, the OLED includes a thin film transistor substrate. The thin film transistor substrate includes a substrate, a source electrode formed over the substrate, a drain electrode formed over the substrate and spaced apart from the source electrode, an oxide semiconductor layer, and a gate electrode. The oxide semiconductor layer includes a source area at least partially overlapping the source electrode, a drain area at least partially overlapping the drain electrode, and a channel area formed between the source area and the drain area. The gate electrode, which is insulated from the oxide semiconductor layer, has a first width at a first end thereof, a second width at a second end opposite to the first end thereof and the first width is different from the second width.

    Abstract translation: 公开了薄膜晶体管基板和有机发光二极管(OLED)显示器。 在一个方面,OLED包括薄膜晶体管衬底。 薄膜晶体管基板包括基板,形成在基板上的源电极,形成在基板上并与源电极间隔开的漏电极,氧化物半导体层和栅电极。 氧化物半导体层包括至少部分地与源电极重叠的源极区域,至少部分地与漏极电极重叠的漏极区域和在源极区域和漏极区域之间形成的沟道区域。 与氧化物半导体层绝缘的栅电极在其第一端具有第一宽度,在与其第一端相对的第二端处具有第二宽度,并且第一宽度不同于第二宽度。

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