公开(公告)号：US20170194479A1

公开(公告)日：2017-07-06

申请号：US15335492

申请日：2016-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNG RYUL LEE ,  SANG MOON LEE ,  CHUL KIM ,  JI EON YOON

IPC: H01L29/78 ,  H01L29/423

CPC classification number: H01L29/785 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66469 ,  H01L29/7848 ,  H01L29/78696

Abstract: A semiconductor device has a fin-type structure which extends in a first direction and includes a laminate of oxide and semiconductor patterns disposed one on another on a first region of a substrate, and a first gate electrode that extends longitudinally in a second direction different from the first direction on the fin-type structure. Each oxide pattern is an oxidized compound containing a first element.