公开(公告)号：US10600679B2

公开(公告)日：2020-03-24

申请号：US15668121

申请日：2017-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Kim ,  Mi Ja Han ,  Dae Hyun Park

IPC: H01L21/768 ,  H01L21/48 ,  H01L21/56 ,  H01L21/02 ,  H01L23/00 ,  H01L23/538 ,  H01L21/683 ,  H01L23/498 ,  H01L23/31

Abstract: A fan-out semiconductor package includes a first connection member having a through-hole, first and second semiconductor chips disposed in the through-hole, an encapsulant encapsulating at least portions of the first connection member, the first semiconductor chip, and the second semiconductor chip, and a second connection member disposed on the first connection member and on active surfaces of the first semiconductor chip and the second semiconductor chip. A redistribution layer of the second connection member is respectively connected to both the first and second connection pads through first and second conductors, and the second conductor has a height greater than that of the first conductor.

公开(公告)号：US10923433B2

公开(公告)日：2021-02-16

申请号：US16105942

申请日：2018-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mi Ja Han ,  Dae Hyun Park ,  Seong Hwan Lee ,  Sang Jong Lee

IPC: H01L23/49 ,  H01L23/552 ,  H01L23/498 ,  H01L25/16 ,  H01L23/00

Abstract: A fan-out semiconductor package includes a connection member including an insulating layer and a redistribution layer, a semiconductor chip disposed on the connection member, an encapsulant encapsulating the semiconductor chip, and an electromagnetic wave shielding layer disposed on the semiconductor chip and including a plurality of degassing holes. The electromagnetic wave shielding layer includes a first region and a second region in which densities of the degassing holes are different from each other, the first region having a density of the degassing holes higher than a density of the degassing holes in the second region.

公开(公告)号：US10373884B2

公开(公告)日：2019-08-06

申请号：US15278248

申请日：2016-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Kim ,  Mi Ja Han ,  Kang Heon Hur ,  Young Gwan Ko

IPC: H01L23/31 ,  H01L23/528 ,  H01L23/538 ,  H01L23/498 ,  H01L23/64

Abstract: The fan-out semiconductor package includes: a semiconductor chip having an active surface having a connection pad disposed thereon and an inactive surface disposed to oppose the active surface; a first capacitor disposed adjacently to the semiconductor chip; an encapsulant at least partially encapsulating the first connection member and the semiconductor chip; a first connection member disposed on the encapsulant, the first capacitor, and the semiconductor chip, and a second capacitor disposed on the other surface of the first connection member opposing one surface of the first connection member on which the semiconductor chip is disposed, wherein the first connection member includes a redistribution layer electrically connected to the connection pad of the semiconductor chip, the first capacitor, and the second capacitor, and the first capacitor and the second capacitor are electrically connected to the connection pad through a common power wiring of the redistribution layer.

公开(公告)号：US10770403B2

公开(公告)日：2020-09-08

申请号：US16197764

申请日：2018-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mi Ja Han ,  Han Kim ,  Seong Chan Park

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00

Abstract: A fan-out semiconductor package includes a connection member including an insulating layer and a redistribution layer, a semiconductor chip disposed on the connection member, an encapsulant encapsulating the semiconductor chip, and an electromagnetic radiation blocking layer disposed above the semiconductor chip and including a base layer in which a plurality of degassing holes are formed and a porous blocking portion filled in the plurality of degassing holes.