公开(公告)号：US11733727B2

公开(公告)日：2023-08-22

申请号：US17680386

申请日：2022-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhan Bae ,  Gyeongseok Song ,  Kyeong-Joon Ko ,  Jaehyun Park ,  Hajung Park ,  Ho-Bin Song

IPC: G05F3/20 ,  H03F3/16 ,  H03K17/22

CPC classification number: G05F3/205 ,  H03F3/16 ,  H03K17/223

Abstract: Disclosed is an integrated circuit including a first bias current generating circuit. The first bias current generating circuit includes a first amplifier receiving a reference voltage and a first voltage and amplifying a difference between them to output a first output voltage, a first bias current generator receiving the first output voltage and outputting a first bias current in response to the first output voltage, a variable resistor receiving the first bias current and outputting the first voltage in response to the first bias current and a calibration code, a second bias current generator receiving the first output voltage and outputting a second bias current to a peripheral circuit in response to the first output voltage, and a third bias current generator receiving the first output voltage and outputting a third bias current to an external device through a first pad in response to the first output voltage.