公开(公告)号：US20140338600A1

公开(公告)日：2014-11-20

申请号：US14259433

申请日：2014-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Cheol LEE ,  Beom-Seok KIM ,  Suk-JIn CHUNG ,  Geun-Kyu CHOI

IPC: C23C16/44

CPC classification number: C23C16/4412

Abstract: An exhausting apparatus includes an exhaust pump configured to extract unreacted precursor in a process chamber and vent the unreacted precursor out of the exhaust pump, and a first material supplier configured to supply a first material into the exhaust pump. The first material is adsorbable on an interior surface of the exhaust pump to prevent the unreacted precursor from being adsorbed on the interior surface of the exhaust pump.

Abstract translation: 排气装置包括排气泵，所述排气泵构造成在处理室中提取未反应的前体并将未反应的前体排出所述排气泵;以及第一材料供应器，其被配置为将第一材料供应到所述排气泵中。 第一材料可吸附在排气泵的内表面上，以防止未反应的前体被吸附在排气泵的内表面上。

公开(公告)号：US20170092480A1

公开(公告)日：2017-03-30

申请号：US15000001

申请日：2016-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-Sun YI ,  Ki-Chul KIM ,  Jong-Cheol LEE ,  Kyu-Hee HAN ,  Jae-Chul SHIN ,  Min-Hwa JUNG ,  Yu-Ho Won ,  Seung-Han LEE ,  Jin-Pil HEO

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/0262 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/4584

Abstract: Provided are gas injection apparatuses, thin-film deposition equipment, and methods for manufacturing a semiconductor device. The gas injection apparatus includes: a base plate; a first gas separation region on the base plate; first and second source gas supplying regions disposed on the base plate to either side of the first gas separation region, respectively, and configured to supply a source gas; and a first reaction gas supplying region disposed at a position on the base plate other than between the first gas separation region and the first source gas supplying region and between the first gas separation region and the second source gas supplying region, and configured to supply a reaction gas, wherein the first source gas supplying region and the second source gas supplying region protrude from the base plate, wherein each of the first source gas supplying region and the second source gas supplying region has a fan-shaped upper face, and wherein the first gas separation region is defined by a side wall of the first source gas supplying region and a side wall of the second source gas supplying region, the side walls facing each other and extending in radial directions.