公开(公告)号：US20210335743A1

公开(公告)日：2021-10-28

申请号：US17371405

申请日：2021-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： JU-IK LEE ,  DONG-WAN KIM ,  SEOKHO SHIN ,  JUNG-HOON HAN ,  SANG-OH PARK

IPC: H01L23/00 ,  H01L23/528 ,  H01L23/48 ,  H01L23/522 ,  H01L25/18 ,  H01L23/31

Abstract: A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.

公开(公告)号：US20160267949A1

公开(公告)日：2016-09-15

申请号：US15164442

申请日：2016-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG-HOON HAN ,  DONG-WAN KIM ,  JU-IK LEE

IPC: G11C5/06 ,  H01L23/535 ,  H01L27/105 ,  H01L23/528 ,  H01L23/532

CPC classification number: G11C5/063 ,  G11C7/18 ,  H01L21/764 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/535 ,  H01L27/105 ,  H01L27/10885 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a bit line structure located on a semiconductor substrate, an outer bit line spacer located on a first side surface of the bit line structure, an inner bit line spacer including a first part located between the bit line structure and the outer bit line spacer and a second part located between the semiconductor substrate and the outer bit line spacer, and a block bit line spacer located between the outer bit line spacer and the second part of the inner bit line spacer. A first air-gap is defined by the outer bit line spacer, the inner bit line spacer, and the block bit line spacer.

公开(公告)号：US20200013745A1

公开(公告)日：2020-01-09

申请号：US16455788

申请日：2019-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JU-IK LEE ,  DONG-WAN KIM ,  SEOK-HOSEAN SHIN ,  JUNG-HOON HAN ,  SANG-OH PARK

IPC: H01L23/00 ,  H01L25/18 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/31

Abstract: A semiconductor device includes a semiconductor substrate and a connection terminal, including a base pillar, on the semiconductor substrate. An insulation layer is formed on the semiconductor substrate, the insulation layer including an opening in the insulation layer through which the base pillar extends, wherein a side wall of the insulation layer defining the opening includes a horizontal step at a level that is lower than an uppermost portion of the base pillar.