公开(公告)号：US20210098728A1

公开(公告)日：2021-04-01

申请号：US17030543

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young CHUNG ,  Hwea Yoon KIM ,  Yeonkyung LEE ,  Eun Joo JANG

IPC: H01L51/50

Abstract: An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material.

公开(公告)号：US20220204844A1

公开(公告)日：2022-06-30

申请号：US17558774

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Hwea Yoon KIM ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: C09K11/88 ,  C09K11/02 ,  C01G9/00

Abstract: A quantum dot including zinc, tellurium, selenium, and sulfur, wherein the quantum dot comprises a core and a shell disposed on the core, and wherein the quantum dot is a cadmium-free red light-emitting quantum dot and has an emission peak wavelength of greater than or equal to about 600 nanometers (nm), and efficiency of greater than or equal to about 50%.

公开(公告)号：US20220002621A1

公开(公告)日：2022-01-06

申请号：US17366429

申请日：2021-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Hwea Yoon KIM ,  Yuho WON

IPC: C09K11/88 ,  C09K11/62 ,  C09K11/06 ,  C09K11/56 ,  C01B19/00 ,  C01G9/08

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US20230250337A1

公开(公告)日：2023-08-10

申请号：US18297755

申请日：2023-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Hwea Yoon KIM ,  Yuho WON

IPC: C09K11/88 ,  C01B19/00 ,  C01G9/08 ,  C09K11/56 ,  C09K11/62

CPC classification number: C09K11/883 ,  C01B19/007 ,  C01G9/08 ,  C09K11/56 ,  C09K11/62 ,  H10K50/115

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US20230121473A1

公开(公告)日：2023-04-20

申请号：US18083782

申请日：2022-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young CHUNG ,  Hwea Yoon KIM ,  Yeonkyung LEE ,  Eun Joo JANG

IPC: H10K50/115 ,  H10K50/11 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17

Abstract: An electroluminescent device and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode, the light emitting layer including a quantum dot; a hole transport layer disposed between the light emitting layer and the first electrode; and an electron transport layer disposed between the light emitting layer and the second electrode, wherein the hole transport layer, the light emitting layer, or a combination thereof includes thermally activated delayed fluorescence material, and the thermally activated delayed fluorescence material is present in an amount of greater than or equal to about 0.01 wt % and less than about 10 weight percent (wt %), based on 100 wt % of the hole transport layer, the light emitting layer, or the combination thereof including the thermally activated delayed fluorescence material.