公开(公告)号：US09419176B2

公开(公告)日：2016-08-16

申请号：US14651974

申请日：2013-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-wook Hwang ,  Han-kyu Seong ,  Hun-jae Chung ,  Nam-goo Cha

IPC: H01L33/16 ,  H01L33/06 ,  H01L27/15 ,  H01L33/40 ,  H01L33/42 ,  H01L33/00 ,  H01L33/62 ,  H01L33/24 ,  H01L33/08 ,  H01L33/20

CPC classification number: H01L33/16 ,  H01L27/153 ,  H01L33/0054 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.

Abstract translation: 三维（3D）发光装置可以包括彼此分开形成的多个3D发光结构，每个3D发光结构包括：在一个表面上垂直生长并以第一导电类型掺杂的半导体芯 ; 形成为包围半导体芯的表面的有源层; 以及形成为围绕有源层的表面并以第二导电类型掺杂的第一半导体层。 3D发光装置可以包括：形成在3D发光结构的下角部之间以暴露3D发光结构的上端部的第一多孔绝缘层; 电连接到第一半导体层的第一电极; 和与半导体芯电连接的第二电极。

公开(公告)号：US08941140B2

公开(公告)日：2015-01-27

申请号：US13844632

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-wook Hwang ,  Seong-eun Park ,  Hun-jae Chung

IPC: H01L33/60 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/60 ,  H01L33/10

Abstract: A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.

Abstract translation: 发光器件包括氮化物基半导体反射器。 发光装置包括氮化物类反射器和设置在氮化物类反射器上的发光单元。 基于氮化物的反射器包括交替层叠的未掺杂的氮化物半导体层和重掺杂的氮化物半导体层。 在其边缘蚀刻重掺杂的氮化物半导体层，以在相邻的未掺杂的氮化物半导体层之间形成空气层。