公开(公告)号：US20220107421A1

公开(公告)日：2022-04-07

申请号：US17494173

申请日：2021-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DAEYUN KIM ,  MINSUN KEEL ,  MYOUNGOH KI ,  YEOMYUNG KIM ,  MYUNGHAN BAE ,  BUMSIK CHUNG

IPC: G01S17/894 ,  G01S7/4865 ,  G01S7/4863 ,  H04N5/376

Abstract: An image sensor includes a plurality of pixels and a phase select circuit. Each pixel outputs a pixel signal corresponding to a photoelectric signal in response to a photo gate signal. The phase select circuit outputs delay clock signals of different phases from each other to an object pixel in response to different integration times from each other in a frame. The phase select circuit includes a plurality of delay circuit cells corresponding to at least some pixels of the plurality of pixels. Each of the plurality of delay circuit cells generates a delay clock signal of a certain phase difference from any one of a reference clock signal and an output signal of another delay circuit cell according to a logic state of a select signal.

公开(公告)号：US20210199781A1

公开(公告)日：2021-07-01

申请号：US16921060

申请日：2020-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGGU JIN ,  MIN-SUN KEEL ,  DAEYUN KIM ,  YOUNGCHAN KIM

IPC: G01S7/486 ,  G01S17/894 ,  G01S17/18 ,  G01S7/4863 ,  G01S7/481

Abstract: An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.