CANISTER
    1.
    发明申请
    CANISTER 有权

    公开(公告)号:US20140041590A1

    公开(公告)日:2014-02-13

    申请号:US13710310

    申请日:2012-12-10

    CPC classification number: C23C16/00 B01F3/04 C23C16/4481 C23C16/4482

    Abstract: A canister includes an accommodation portion for accommodating a liquid material; an outlet pipe that is connected to the accommodation portion so as to discharge a gas material obtained by vaporizing the liquid material; a blocking cover that is connected to an upper surface of the accommodation portion; and a plurality of baffle plates that are disposed in the accommodation portion and are spaced apart from each other. The canister further includes a restrictor including a main body member that is disposed between the plurality of baffle plates and the blocking cover and is connected to an internal surface of the accommodation portion, an extension member extending from the main body member, and a through portion that is formed through the main body member and the extension member. A deposition procedure using the canister is efficiently performed and characteristics of a deposition layer are easily improved.

    Abstract translation: 罐包括用于容纳液体材料的容纳部分; 出口管,其连接到容纳部分,以排出通过汽化液体材料获得的气体材料; 阻挡盖,其连接到所述容纳部的上表面; 以及设置在容纳部分中并彼此间隔开的多个挡板。 所述罐还包括限制器,所述限制器包括主体部件,所述主体部件设置在所述多个挡板和所述阻挡盖之间,并且连接到所述容纳部的内表面,从所述主体部件延伸的延伸部件, 其通过主体构件和延伸构件形成。 可以有效地进行使用罐的沉积工序,容易地提高沉积层的特性。

    METHOD OF DEPOSITING AN ATOMIC LAYER AND ATOMIC LAYER DEPOSITION APPARATUS
    2.
    发明申请
    METHOD OF DEPOSITING AN ATOMIC LAYER AND ATOMIC LAYER DEPOSITION APPARATUS 有权
    沉积原子层和原子层沉积装置的方法

    公开(公告)号:US20150050421A1

    公开(公告)日:2015-02-19

    申请号:US14296029

    申请日:2014-06-04

    CPC classification number: C23C16/45574 C23C16/45551 C23C16/458

    Abstract: A method of depositing a layer includes spraying a source gas and a reactant gas onto a substrate disposed on a susceptor unit using at least one source gas spray nozzle and at least one reactant gas nozzle to form a first source gas region and a first reactant gas region on the substrate, respectively, moving the susceptor unit by a distance corresponding to a width of the source gas spray nozzle or a width of the reactant gas spray nozzle in a first direction, and spraying the source gas and the reactant gas onto the first reactant gas region and the first source gas region using the source gas spray nozzle and the reactant gas nozzle, respectively, to form a first monolayer.

    Abstract translation: 沉积层的方法包括使用至少一个源气体喷嘴和至少一个反应气体喷嘴将源气体和反应气体喷射到设置在基座单元上的基板上,以形成第一源气体区域和第一反应气体 区域,分别使基座单元沿着第一方向移动对应于源气体喷嘴的宽度的距离或反应气体喷嘴的宽度,并将源气体和反应气体喷射到第一方向上 反应气体区域和第一源气体区域分别使用源气体喷嘴和反应气体喷嘴形成第一单层。

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