公开(公告)号：US20210028272A1

公开(公告)日：2021-01-28

申请号：US16886876

申请日：2020-05-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SUNGHWAN WON ,  Jongmoo Huh ,  Kyumin Kim ,  Doohyun Kim ,  Songhee Kim ,  Jeehoon Kim ,  Shinhyuk Yang

IPC: H01L27/32

Abstract: A display device includes a substrate including a display area and a peripheral area outside the display area, a thin-film transistor arranged in the display area, a display element arranged in the display area, an interlayer insulating layer covering the thin-film transistor, a conductive layer arranged above the interlayer insulating layer, a first insulating layer covering the conductive layer, a pad arranged in the peripheral area, and a second conductive layer covering a central portion of the pad. The pad is connected to a connection line through a contact hole, and the connection line is arranged on a same first layer as a gate electrode of the thin-film transistor. A side surface of the pad is covered by the first insulating layer or the second conductive layer.

公开(公告)号：US11302771B2

公开(公告)日：2022-04-12

申请号：US16886876

申请日：2020-05-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sunghwan Won ,  Jongmoo Huh ,  Kyumin Kim ,  Doohyun Kim ,  Songhee Kim ,  Jeehoon Kim ,  Shinhyuk Yang

IPC: H01L29/08 ,  H01L27/32

Abstract: A display device includes a substrate including a display area and a peripheral area outside the display area, a thin-film transistor arranged in the display area, a display element arranged in the display area, an interlayer insulating layer covering the thin-film transistor, a conductive layer arranged above the interlayer insulating layer, a first insulating layer covering the conductive layer, a pad arranged in the peripheral area, and a second conductive layer covering a central portion of the pad. The pad is connected to a connection line through a contact hole, and the connection line is arranged on a same first layer as a gate electrode of the thin-film transistor. A side surface of the pad is covered by the first insulating layer or the second conductive layer.

公开(公告)号：US10396140B2

公开(公告)日：2019-08-27

申请号：US15427111

申请日：2017-02-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jeehoon Kim ,  Shinhyuk Yang ,  Doohyun Kim ,  Kwangsoo Lee ,  Inyoung Jung

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/52 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A thin film transistor includes a substrate and a gate electrode disposed over the substrate. The gate electrode includes a center part and a peripheral part configured to at least partially surround the center part. The thin film transistor further includes a gate insulating layer disposed below the gate electrode and a first electrode insulated from the gate electrode by the gate insulating layer. The first electrode has at least a portion thereof overlapping the center part. The thin film transistor additionally includes a spacer disposed below the first electrode and a second electrode insulated from the first electrode by the spacer. The second electrode has at least a portion thereof overlapping the peripheral part. The thin film transistor further includes a semiconductor layer connected to the first and second electrodes, and insulated from the gate electrode by the gate insulating layer.