Process for manufacturing a hydrophobic glazing containing a carbon rich silicon oxycarbide tie layer
    1.
    发明授权
    Process for manufacturing a hydrophobic glazing containing a carbon rich silicon oxycarbide tie layer 有权
    用于制造含有富含碳碳硅碳键的层的疏水性玻璃的方法

    公开(公告)号:US09051213B2

    公开(公告)日:2015-06-09

    申请号:US14358496

    申请日:2012-11-14

    IPC分类号: C03C17/34 C03C23/00 C03C17/42

    摘要: A process for manufacturing a hydrophobic glazing by: (i) forming a carbon-rich SiOxCy layer at a surface of a mineral glass substrate via CVD by contacting the surface with a stream containing C2H4, SiH4, and CO2 with an C2H4/SiH4 ratio of less than or equal to 3.3 by volume, at a temperature of between 600° C. and 680° C.; (ii) forming a SiO2 layer or a carbon-poor silicon oxycarbide layer with a mean C/Si ratio of less than 0.2 on the carbon-rich SiOxCy layer, thereby obtaining a layered substrate; (iii) annealing and/or shaping the layered substrate at a temperature of between 580° C. and 700° C.; (iv) activating the SiO2 layer or the carbon-poor silicon oxycarbide layer by plasma treatment or acidic or basic chemical treatment; and (v) grafting, by covalent bonding, a fluorinated hydrophobic agent to the surface of the SiO2 layer or the carbon-poor silicon oxycarbide layer.

    摘要翻译: 一种用于制造疏水性玻璃的方法,该方法是:(i)通过CVD将所述表面与含有C 2 H 4,SiH 4和CO 2的物流接触,使C 2 H 4 / SiH 4比为 小于或等于3.3体积,温度在600℃至680℃之间。 (ii)在富碳的SiO xCy层上形成平均C / Si比小于0.2的SiO 2层或碳碳硅碳化硅层,从而得到层状基板; (iii)在580℃和700℃之间的温度下退火和/或成型层状基板。 (iv)通过等离子体处理或酸性或碱性化学处理来活化SiO 2层或碳 - 碳碳化硅层; 和(v)通过共价键合将氟化疏水剂接枝到SiO 2层的表面或不含碳的硅碳氧化物层上。

    BARRIER LAYER TO SIOC ALKALI METALS
    2.
    发明申请
    BARRIER LAYER TO SIOC ALKALI METALS 有权
    BARRIER层到SIOC ALKALI金属

    公开(公告)号:US20140349107A1

    公开(公告)日:2014-11-27

    申请号:US14358540

    申请日:2012-11-14

    IPC分类号: C03C17/34 C23C16/32 C23C16/40

    摘要: The invention relates to a glazing comprising a transparent glass substrate containing ions of at least one alkali metal and a transparent layer mad of silicon oxycarbide (SiOxCy) having a total thickness E with (a) a carbon-rich deep zone, extending from a depth P3 to a depth P4, where the C/Si atomic ratio is greater than or equal to 0.5, and (b) a carbon-poor surface zone, extending from a depth P1 to a depth P2, where the C/Si atomic ratio is less than or equal to 0.4, with P1

    摘要翻译: 本发明涉及一种玻璃,其包括含有至少一种碱金属的离子的透明玻璃基底和具有总厚度E的氧化碳硅(SiO xCy)的透明层,(a)富含碳的深区,从深度延伸 P3至深度P4,其中C / Si原子比大于或等于0.5,以及(b)从深度P1延伸到深度P2的碳贫表面区,其中C / Si原子比为 小于或等于0.4,P1

    HYDROPHOBIC GLAZING
    4.
    发明申请

    公开(公告)号:US20140315027A1

    公开(公告)日:2014-10-23

    申请号:US14358496

    申请日:2012-11-14

    IPC分类号: C03C17/42 C03C17/34

    摘要: The invention relates to a process for the manufacture of a hydrophobic glazing comprising the following successive stages:(a) formation of a carbon-rich silicon oxycarbide (SiOxCy) layer at the surface of a substrate made of mineral glass by chemical vapor deposition (CVD) over at least a portion of the surface of said substrate by bringing said surface into contact with a stream of reactive gases comprising ethylene (C2H4), silane (SiH4) and carbon dioxide (CO2) at a temperature of between 600° C. and 680° C., the ethylene/silane (C2H4/SiH4) ratio by volume during stage (a) being less than or equal to 3.3,(b) formation of an SiO2 layer on the silicon oxycarbide layer deposited in stage (a) or(b′) formation of a carbon-poor silicon oxycarbide layer exhibiting a mean C/Si ratio of less than 0.2,(c) annealing and/or shaping the substrate obtained on conclusion of stage (b) or (b′) at a temperature of between 580° C. and 700° C.,(d) activation of the silica layer, formed in stage (b), or of the silicon oxycarbide layer, formed in stage (b′), by plasma treatment or acidic or basic chemical treatment, and(e) grafting, by covalent bonding, a fluorinated hydrophobic agent.It also relates to a hydrophobic glazing, preferably a windshield, capable of being obtained by such a process.

    摘要翻译: 本发明涉及一种用于制造疏水玻璃的方法,其包括以下连续阶段:(a)通过化学气相沉积(CVD)在由矿物玻璃制成的基材的表面上形成富碳硅碳氧化物(SiO x C C)层 )通过使所述表面与包含乙烯(C 2 H 4),硅烷(SiH 4)和二氧化碳(CO 2)的反应性气体流在600℃和...之间的温度下与所述基材的表面的至少一部分接触, (a)期间的乙烯/硅烷(C 2 H 4 / SiH 4)体积比小于或等于3.3,(b)在阶段(a)中沉积的碳氧化硅层上形成SiO 2层,或 (b')形成平均C / Si比小于0.2的碳不足的碳硅氧化物层,(c)在(b)或(b')结束时获得的基板的退火和/或成形在 温度在580℃至700℃之间,(d)二氧化硅层的活化 阶段(b)或阶段(b')中形成的碳氧化硅层,通过等离子体处理或酸性或碱性化学处理,和(e)通过共价键接枝氟化疏水剂。 它还涉及能够通过这种方法获得的疏水性玻璃,优选挡风玻璃。