公开(公告)号：US20190122973A1

公开(公告)日：2019-04-25

申请号：US16220764

申请日：2018-12-14

Applicant: QUALCOMM Incorporated

Inventor： Kambiz Samadi ,  Shreepad Amar Panth ,  Yang Du ,  Robert Philip Gilmore

IPC: H01L23/498 ,  G06F17/50 ,  H01L21/768

CPC classification number: H01L23/49827 ,  G06F17/5068 ,  H01L21/76802 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A hard macro includes a periphery defining a hard macro area and having a top and a bottom and a hard macro thickness from the top to the bottom, the hard macro including a plurality of vias extending through the hard macro thickness from the top to the bottom. Also an integrated circuit having a top layer, a bottom layer and at least one middle layer, the top layer including a top layer conductive trace, the middle layer including a hard macro and the bottom layer including a bottom layer conductive trace, wherein the top layer conductive trace is connected to the bottom layer conductive trace by a via extending through the hard macro.

公开(公告)号：US20150333005A1

公开(公告)日：2015-11-19

申请号：US14795914

申请日：2015-07-10

Applicant: QUALCOMM Incorporated

Inventor： Kambiz Samadi ,  Shreepad Amar Panth ,  Pratyush Kamal ,  Yang Du

IPC: H01L23/522 ,  G06F17/50 ,  H01L27/06

CPC classification number: H01L23/5226 ,  G06F17/5072 ,  G06F17/5081 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Placement of Monolithic Inter-tier Vias (MIVs) within monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) using clustering to increase usable whitespace is disclosed. In one embodiment, a method of placing MIVs in a monolithic 3DIC using clustering is provided. The method comprises determining if any MIV placement clusters are included within a plurality of initial MIV placements of a plurality of MIVs within an initial 3DIC layout plan. The method further comprises aligning each MIV of the plurality of MIVs within each MIV placement cluster in the initial 3DIC layout plan at a final MIV placement for each MIV placement cluster to provide a clustered 3DIC layout plan.

Abstract translation: 公开了使用聚类来增加可用空白位置的单片三维（3D）集成电路（IC）（3DIC）中的单片间通道（MIV））。 在一个实施例中，提供了使用聚类将MIV放置在单片3DIC中的方法。 该方法包括确定在初始3DIC布局图中是否有多个MIV的多个初始MIV布置内是否包括任何MIV布局群集。 该方法还包括在初始3DIC布局图中的每个MIV放置簇内的多个MIV中的每个MIV在每个MIV放置簇的最终MIV放置处对齐以提供聚集的3DIC布局图。

公开(公告)号：US11004780B2

公开(公告)日：2021-05-11

申请号：US16688057

申请日：2019-11-19

Applicant: QUALCOMM Incorporated

Inventor： Kambiz Samadi ,  Shreepad Amar Panth ,  Yang Du ,  Robert Philip Gilmore

IPC: H01L23/498 ,  H01L21/768 ,  G06F30/39

Abstract: A hard macro includes a periphery defining a hard macro area and having a top and a bottom and a hard macro thickness from the top to the bottom, the hard macro including a plurality of vias extending through the hard macro thickness from the top to the bottom. Also an integrated circuit having a top layer, a bottom layer and at least one middle layer, the top layer including a top layer conductive trace, the middle layer including a hard macro and the bottom layer including a bottom layer conductive trace, wherein the top layer conductive trace is connected to the bottom layer conductive trace by a via extending through the hard macro.

公开(公告)号：US10510651B2

公开(公告)日：2019-12-17

申请号：US16220764

申请日：2018-12-14

Applicant: QUALCOMM Incorporated

Inventor： Kambiz Samadi ,  Shreepad Amar Panth ,  Yang Du ,  Robert Philip Gilmore

IPC: H01L23/498 ,  H01L21/768 ,  G06F17/50

Abstract: A hard macro includes a periphery defining a hard macro area and having a top and a bottom and a hard macro thickness from the top to the bottom, the hard macro including a plurality of vias extending through the hard macro thickness from the top to the bottom. Also an integrated circuit having a top layer, a bottom layer and at least one middle layer, the top layer including a top layer conductive trace, the middle layer including a hard macro and the bottom layer including a bottom layer conductive trace, wherein the top layer conductive trace is connected to the bottom layer conductive trace by a via extending through the hard macro.

公开(公告)号：US09123721B2

公开(公告)日：2015-09-01

申请号：US14132098

申请日：2013-12-18

Applicant: QUALCOMM Incorporated

Inventor： Kambiz Samadi ,  Shreepad Amar Panth ,  Pratyush Kamal ,  Yang Du

IPC: H01L21/768 ,  H01L23/522 ,  G06F17/50

CPC classification number: H01L23/5226 ,  G06F17/5072 ,  G06F17/5081 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Placement of Monolithic Inter-tier Vias (MIVs) within monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) using clustering to increase usable whitespace is disclosed. In one embodiment, a method of placing MIVs in a monolithic 3DIC using clustering is provided. The method comprises determining if any MIV placement clusters are included within a plurality of initial MIV placements of a plurality of MIVs within an initial 3DIC layout plan. The method further comprises aligning each MIV of the plurality of MIVs within each MIV placement cluster in the initial 3DIC layout plan at a final MIV placement for each MIV placement cluster to provide a clustered 3DIC layout plan.

Abstract translation: 公开了使用聚类来增加可用空白位置的单片三维（3D）集成电路（IC）（3DIC）中的单片间通道（MIV））。 在一个实施例中，提供了使用聚类将MIV放置在单片3DIC中的方法。 该方法包括确定在初始3DIC布局图中是否有多个MIV的多个初始MIV布置内是否包括任何MIV布局群集。 该方法还包括在初始3DIC布局图中的每个MIV放置簇内的多个MIV中的每个MIV在每个MIV放置簇的最终MIV放置处对齐以提供聚集的3DIC布局图。

公开(公告)号：US20150145143A1

公开(公告)日：2015-05-28

申请号：US14132098

申请日：2013-12-18

Applicant: QUALCOMM Incorporated

Inventor： Kambiz Samadi ,  Shreepad Amar Panth ,  Pratyush Kamal ,  Yang Du

IPC: H01L23/522 ,  G06F17/50

CPC classification number: H01L23/5226 ,  G06F17/5072 ,  G06F17/5081 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Placement of Monolithic Inter-tier Vias (MIVs) within monolithic three dimensional (3D) integrated circuits (ICs) (3DICs) using clustering to increase usable whitespace is disclosed. In one embodiment, a method of placing MIVs in a monolithic 3DIC using clustering is provided. The method comprises determining if any MIV placement clusters are included within a plurality of initial MIV placements of a plurality of MIVs within an initial 3DIC layout plan. The method further comprises aligning each MIV of the plurality of MIVs within each MIV placement cluster in the initial 3DIC layout plan at a final MIV placement for each MIV placement cluster to provide a clustered 3DIC layout plan.

Abstract translation: 公开了使用聚类来增加可用空白位置的单片三维（3D）集成电路（IC）（3DIC）中的单片间通道（MIV））。 在一个实施例中，提供了使用聚类将MIV放置在单片3DIC中的方法。 该方法包括确定在初始3DIC布局图中是否有多个MIV的多个初始MIV布置内是否包括任何MIV布局群集。 该方法还包括在初始3DIC布局图中的每个MIV放置簇内的多个MIV中的每个MIV在每个MIV放置簇的最终MIV放置处对齐以提供聚集的3DIC布局图。