公开(公告)号：US20190393359A1

公开(公告)日：2019-12-26

申请号：US16119914

申请日：2018-08-31

Applicant: QUALCOMM Incorporated

Inventor： Chuan-Hsing CHEN ,  Chuan-cheng CHENG ,  Yun YUE ,  Ye LU

IPC: H01L29/93 ,  H01L29/66 ,  H01L21/225

Abstract: A metal oxide semiconductor (MOS) varactor includes a first diffusion region of a first polarity and a second diffusion region of the first polarity on a semiconductor substrate. The MOS varactor further includes a channel between the first diffusion region and the second diffusion region on the semiconductor substrate. The channel has a surface dopant concentration less than 4 e1017.