公开(公告)号：US20030139038A1

公开(公告)日：2003-07-24

申请号：US10138104

申请日：2002-05-03

Applicant: ProMos Technologies, Inc.

Inventor： S.C. Sun

IPC: H01L021/4763 ,  H01L021/44

CPC classification number: H01L21/823842 ,  H01L21/823835

Abstract: A method for manufacturing a semiconductor element is provided. The method includes a first silicon region, a second silicon region, and a metal silicide layer, wherein the metal silicide layer contacts with the first silicon region and the second silicon region separately, the method including steps of performing a first doping process to dope an N-type dopant into the first silicon region and to dope a diffusion barrier impurity into a portion of the metal silicide layer contacting with the first silicon region, and performing a second doping process to dope a P-type dopant into the second silicon region and to dope a diffusion barrier impurity into a portion of the metal silicide layer contacting with the second silicon region.

Abstract translation: 提供一种半导体元件的制造方法。 该方法包括第一硅区域，第二硅区域和金属硅化物层，其中金属硅化物层分别与第一硅区域和第二硅区域接触，该方法包括以下步骤：执行第一掺杂工艺以掺杂 将N型掺杂剂注入到第一硅区域中，并且将扩散阻挡杂质掺杂到与第一硅区接触的金属硅化物层的一部分中，以及执行第二掺杂工艺以将P型掺杂剂掺杂到第二硅区域中， 以将扩散阻挡杂质掺杂到与第二硅区接触的金属硅化物层的一部分中。