Ethernet module
    2.
    发明授权
    Ethernet module 有权
    以太网模块

    公开(公告)号:US09189036B2

    公开(公告)日:2015-11-17

    申请号:US11739565

    申请日:2007-04-24

    IPC分类号: G06F1/26 G06F1/18

    CPC分类号: G06F1/189

    摘要: In a network device, a connector module comprises a network connector coupled to the connector module in a configuration that transfers power and communication signals and an application connector that comprises serial media independent interface (SMII) pins and power pins. A Power-over-Ethernet (PoE) circuit is coupled between the network connector and the application connector.

    摘要翻译: 在网络设备中,连接器模块包括以传输电力和通信信号的配置耦合到连接器模块的网络连接器以及包括串行媒体无关接口(SMII)引脚和电源引脚的应用连接器。 以太网供电(PoE)电路耦合在网络连接器和应用连接器之间。

    DIGITAL ISOLATOR
    5.
    发明申请
    DIGITAL ISOLATOR 失效
    数字隔离器

    公开(公告)号:US20080218258A1

    公开(公告)日:2008-09-11

    申请号:US11683985

    申请日:2007-03-08

    IPC分类号: H03F3/38

    摘要: A signal isolator comprises an isolation barrier, a transmitter, a differentiator, and a recovery circuit. The transmitter is coupled to a first side of the isolation barrier and is configured to receive and convert an information signal to a differential signal that encodes information in the information signal in a single transition edge. The differentiator is coupled to a second side that is isolated from the first side of the isolation harrier and differentiates the differential signal. The recovery circuit is coupled to the differentiator and operates to recover an output information signal based on the information in the single transition edge.

    摘要翻译: 信号隔离器包括隔离屏障,发射器,微分器和恢复电路。 发射机耦合到隔离屏障的第一侧,并且被配置为接收并将信息信号转换为在单个过渡边缘中对信息信号中的信息进行编码的差分信号。 微分器耦合到与隔离器的第一侧隔离并且差分差分信号的第二侧。 恢复电路耦合到微分器并且操作以基于单个过渡边缘中的信息来恢复输出信息信号。

    Active clamp protection device
    6.
    发明授权
    Active clamp protection device 失效
    有源钳位保护装置

    公开(公告)号:US07706112B2

    公开(公告)日:2010-04-27

    申请号:US11613156

    申请日:2006-12-19

    IPC分类号: H02H3/22

    CPC分类号: H02H3/023 H02H9/04

    摘要: An active clamp device electrically couples first and second nodes in respective first and second supply domains referenced to ground potentials that can be different. The active clamp device comprises first and second active devices controlled by signals respectively referenced to the first and second supply domains that create a short-circuit or low impedance connection between the first and second nodes in normal operation and drive impedance between the first and second nodes high in response to a transient event.

    摘要翻译: 有源钳位装置将第一和第二节点电耦合在相对于可能不同的地电位的第一和第二供电区域中。 有源钳位装置包括由分别参考第一和第二电源域的信号控制的第一和第二有源器件,它们在正常操作中在第一和第二节点之间产生短路或低阻抗连接,并且在第一和第二节点之间产生驱动阻抗 对瞬态事件的反应很高。

    CAPACITOR STRUCTURE IN A SEMICONDUCTOR DEVICE
    7.
    发明申请
    CAPACITOR STRUCTURE IN A SEMICONDUCTOR DEVICE 审中-公开
    半导体器件中的电容结构

    公开(公告)号:US20100193907A1

    公开(公告)日:2010-08-05

    申请号:US12759615

    申请日:2010-04-13

    IPC分类号: H01L29/92 H01L21/02

    摘要: A semiconductor device comprises an integrated circuit formed on a substrate with a signal interface and at least one isolator capacitor. The integrated circuit comprises a plurality of interleaved inter-metal dielectric layers and interlayer dielectrics formed on the substrate, a thick passivation layer formed on the plurality of the interleaved inter-metal dielectric layers and interlayer dielectrics, and a thick metal layer formed on the thick passivation layer. The thick passivation layer has a thickness selected to be greater than the isolation thickness whereby testing for defects is eliminated. The one or more isolator capacitors comprise the thick metal layer and a metal layer in the plurality of interleaved inter-metal dielectric layers and interlayer dielectrics separated by the thick passivation layer as an insulator.

    摘要翻译: 半导体器件包括形成在具有信号接口的衬底上的集成电路和至少一个隔离电容器。 集成电路包括形成在基板上的多个交错的金属间介电层和层间电介质,形成在多个交错的金属间电介质层和层间电介质上的厚钝化层,以及形成在厚层上的厚金属层 钝化层。 厚钝化层的厚度选择为大于隔离厚度,从而消除了缺陷的测试。 一个或多个隔离电容器包括厚金属层和多个交错的金属间介电层中的金属层和由作为绝缘体的厚钝化层分离的层间电介质。

    Power Over Ethernet Reclassification
    8.
    发明申请
    Power Over Ethernet Reclassification 审中-公开
    以太网供电重分类

    公开(公告)号:US20090327766A1

    公开(公告)日:2009-12-31

    申请号:US12165356

    申请日:2008-06-30

    IPC分类号: G06F1/26

    CPC分类号: G06F1/266 H04L12/10

    摘要: A power over Ethernet (PoE) system has a reclassification functionality. The illustrative PoE system comprises a powered device (PD) and a power sourcing equipment (PSE) communicatively coupled to the PD. A classification identification component coupled to the PD encodes a classification value. A classification identification component can typically be implemented as a classification resistor, although any other suitable component such as a capacitor, inductor, register, or other structure or method can otherwise be implemented. The PoE system can further comprise a reclassification register in a non-volatile memory that stores a value indicative of a new classification state and a new classification identifier and a power switch that powers the powered device to a classification voltage. A PD controller is coupled to the powered device that reads the value indicative of the new classification state and, if the new classification state is asserted, reads the new classification identifier and sets classification according to the new classification identifier. If the new classification state is not asserted, the PD controller sets classification according to the classification identification component.

    摘要翻译: 以太网供电(PoE)系统具有重新分类功能。 说明性的PoE系统包括通信地耦合到PD的供电设备(PD)和电源设备(PSE)。 耦合到PD的分类识别组件对分类值进行编码。 通常可以将分类识别组件实现为分类电阻器,但是可以实现诸如电容器,电感器,寄存器或其它结构或方法的任何其它合适的组件。 PoE系统还可以包括在非易失性存储器中存储指示新分类状态的值的重新分类寄存器和新的分类标识符,以及将被供电的设备供电到分类电压的电源开关。 PD控制器耦合到被动设备,其读取指示新分类状态的值,并且如果新分类状态被断言,则读取新的分类标识符并根据新的分类标识符进行分类。 如果新的分类状态未被确认,则PD控制器根据分类识别组件设置分类。

    CAPACITOR STRUCTURE IN A SEMICONDUCTOR DEVICE
    10.
    发明申请
    CAPACITOR STRUCTURE IN A SEMICONDUCTOR DEVICE 失效
    半导体器件中的电容结构

    公开(公告)号:US20080290444A1

    公开(公告)日:2008-11-27

    申请号:US11753524

    申请日:2007-05-24

    IPC分类号: H01L21/20 H01L29/00

    摘要: A semiconductor device comprises an integrated circuit formed on a substrate with a signal interface and at least one isolator capacitor. The integrated circuit comprises a plurality of interleaved inter-metal dielectric layers and interlayer dielectrics formed on the substrate, a thick passivation layer formed on the plurality of the interleaved inter-metal dielectric layers and interlayer dielectrics, and a thick metal layer formed on the thick passivation layer. The thick passivation layer has a thickness selected to be greater than the isolation thickness whereby testing for defects is eliminated. The one or more isolator capacitors comprise the thick metal layer and a metal layer in the plurality of interleaved inter-metal dielectric layers and interlayer dielectrics separated by the thick passivation layer as an insulator.

    摘要翻译: 半导体器件包括形成在具有信号接口的衬底上的集成电路和至少一个隔离电容器。 集成电路包括形成在基板上的多个交错的金属间介电层和层间电介质,形成在多个交错的金属间电介质层和层间电介质上的厚钝化层,以及形成在厚层上的厚金属层 钝化层。 厚钝化层的厚度选择为大于隔离厚度,从而消除了缺陷的测试。 一个或多个隔离电容器包括厚金属层和多个交错的金属间介电层中的金属层和由作为绝缘体的厚钝化层分离的层间电介质。