公开(公告)号：US20180017485A1

公开(公告)日：2018-01-18

申请号：US15542411

申请日：2016-01-20

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KOJI SAKAI ,  SHINICHI KISHIMOTO ,  DAISUKE WAKABAYASHI

IPC: G01N21/3577 ,  G01N21/01 ,  G01N21/27 ,  G01N21/31 ,  G01N33/28 ,  G01N21/59

CPC classification number: G01N21/3577 ,  G01N21/01 ,  G01N21/0332 ,  G01N21/05 ,  G01N21/27 ,  G01N21/31 ,  G01N33/2835 ,  G01N2021/058 ,  G01N2021/5961

Abstract: A purpose of the present invention is to provide a sensor with high sensitivity or high target substance selectivity.A sensor that includes a structure having an internal space into which a detection target is capable of flowing, a light-emitting element, and a photo-receptor element is provided. The sensor is disposed so that light emitted from the light-emitting element passes through the internal space to reach the photo-receptor element. A wavelength of the light emitted from the light-emitting element falls within a range from 2.5 μm to 15 μm inclusive. A length of the internal space in a direction perpendicular to an extension direction of the structure should preferably be less than or equal to 1000 μm.

公开(公告)号：US20210313378A1

公开(公告)日：2021-10-07

申请号：US17347447

申请日：2021-06-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE WAKABAYASHI ,  YUUKO TOMEKAWA

IPC: H01L27/146

Abstract: A photoelectric conversion device includes: a substrate; a photodetection film including a first surface facing the substrate and a second surface opposing the first surface; first electrodes provided between the substrate and the photodetection film; a second electrode provided between the substrate and the photodetection film and including a first portion overlapped with the first surface and a second portion not overlapped therewith when viewed from a normal direction of the substrate; a third electrode provided on the second surface of the photodetection film and including a third surface facing the second surface; wiring allowing for conduction between the second and third electrodes; and a first conductive plug connected with the first portion and extending toward the substrate. Material of the first conductive plug differs from that of the second electrode. The wiring is in contact with a side surface of the photodetection film and the second portion.

公开(公告)号：US20220216259A1

公开(公告)日：2022-07-07

申请号：US17705226

申请日：2022-03-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE WAKABAYASHI ,  YUUKO TOMEKAWA

IPC: H01L27/146 ,  H04N5/3745

Abstract: An imaging device includes a pixel section and a peripheral circuitry section provided around the pixel section. The pixel section includes: a photoelectric conversion film; a top electrode located above the photoelectric conversion film; bottom electrodes that face the top electrode, with the photoelectric conversion film being disposed between the top electrode and the bottom electrodes; and a first light-shielding film that overlaps part of the photoelectric conversion film in a plan view and that is electrically connected to the top electrode. The first light-shielding film has electrical conductivity. The peripheral circuitry section includes peripheral circuitry and a second light-shielding film that overlaps at least part of the peripheral circuitry in the plan view. The first light-shielding film and the second light-shielding film are separated from each other.

公开(公告)号：US20240008297A1

公开(公告)日：2024-01-04

申请号：US18468719

申请日：2023-09-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE WAKABAYASHI

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An imaging device includes a semiconductor substrate, a first photoelectric converter located above the semiconductor substrate and converting light having a wavelength in a first wavelength range into first charge, and a second photoelectric converter located above the first photoelectric converter and converting light having a wavelength in a second wavelength range into second charge. The first photoelectric converter includes a first pixel electrode, a first counter electrode facing the first pixel electrode, and a first photoelectric conversion layer located between the first pixel electrode and the first counter electrode. The imaging device further includes a plug that penetrates the first photoelectric conversion layer and that is connected to the second photoelectric converter and an insulating layer that is located between the first photoelectric conversion layer and the plug and that covers a side surface of the plug. The insulating layer has a tapered shape that tapers upward.

公开(公告)号：US20230114451A1

公开(公告)日：2023-04-13

申请号：US18051866

申请日：2022-11-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： DAISUKE WAKABAYASHI ,  YUUKO TOMEKAWA

IPC: H10K39/32

Abstract: An imaging device includes: a photoelectric conversion film; a first electrode located above the photoelectric conversion film; a second electrode; a plug coupled to the second electrode; a protective film located above the second electrode; and a wiring line that electrically couples the first electrode to the second electrode. The protective film overlaps the entire plug and does not overlap the photoelectric conversion film in plan view. The second electrode includes a non-overlapping portion that does not overlap the protective film in plan view, and the wiring line is coupled to the non-overlapping portion of the second electrode.