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公开(公告)号:US11430538B1
公开(公告)日:2022-08-30
申请号:US17195547
申请日:2021-03-08
Applicant: PHISON ELECTRONICS CORP.
Inventor: Yu-Hsiang Lin , Pochiao Chou , Cheng-Che Yang
Abstract: A memory control method, a memory storage device, and a memory control circuit unit are provided. The method includes: executing a single page encoding operation on first data stored in a first type physical unit to generate local parity data; executing a global encoding operation on second data stored in at least two of the first type physical unit, a second type physical unit, and a third type physical unit to generate global parity data; reading the second data from the at least two of the first type physical unit, the second type physical unit, and the third type physical unit in response to a failure of a single page decoding operation for the first data; and executing a global decoding operation on the second data according to the global parity data.
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公开(公告)号:US20220254431A1
公开(公告)日:2022-08-11
申请号:US17195547
申请日:2021-03-08
Applicant: PHISON ELECTRONICS CORP.
Inventor: Yu-Hsiang Lin , Pochiao Chou , Cheng-Che Yang
Abstract: A memory control method, a memory storage device, and a memory control circuit unit are provided. The method includes: executing a single page encoding operation on first data stored in a first type physical unit to generate local parity data; executing a global encoding operation on second data stored in at least two of the first type physical unit, a second type physical unit, and a third type physical unit to generate global parity data; reading the second data from the at least two of the first type physical unit, the second type physical unit, and the third type physical unit in response to a failure of a single page decoding operation for the first data; and executing a global decoding operation on the second data according to the global parity data.
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